Dynamic Sharing between Paralleled SiC MOSFETs Caused by Threshold Voltage Mismatch

机译：阈值电压不匹配导致并联SiC MOSFET之间的动态共享

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Spread in threshold voltage causes imbalance between paralleled MOSFETs during switching transients. This paper focuses on dynamic balancing through passive compensation. Complex current/voltage sensing and feedback loop design are avoided. Instant balancing with unknown asymmetric Vth is achieved utilizing single gate driver. Current/power balancing is obtained without sacrificing switching loss. Simple design guideline is deduced to limit difference of peak currents within 5% of steady-state current. The effectiveness is verified by both simulation and experiment.

机译：阈值电压的扩展会导致开关瞬态期间并联MOSFET之间的不平衡。本文着重于通过被动补偿实现动态平衡。避免了复杂的电流/电压检测和反馈环路设计。利用单栅极驱动器可以实现未知Vth对称的即时平衡。在不牺牲开关损耗的情况下获得电流/功率平衡。推导简单的设计指南，以将峰值电流的差异限制在稳态电流的5％以内。仿真和实验均验证了其有效性。

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来源
《2016 COES annual conference proceedings》|2016年|1-9|共9页
会议地点 Blacksburg VA(US)
作者
Yincan Mao; Zichen Miao; Khai D. T. Ngo;
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作者单位

Center for Power Electronics SystemsThe Bradley Department of Electrical and Computer EngineeringVirginia Polytechnic Institute and State UniversityBlacksburg, VA 24061 USA;

Center for Power Electronics SystemsThe Bradley Department of Electrical and Computer EngineeringVirginia Polytechnic Institute and State UniversityBlacksburg, VA 24061 USA;

Center for Power Electronics SystemsThe Bradley Department of Electrical and Computer EngineeringVirginia Polytechnic Institute and State UniversityBlacksburg, VA 24061 USA;

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原文格式 PDF
正文语种 eng
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关键词
Dynamic balancing; Paralleled SiC MOSFETs; Passive compensation; Threshold voltage mismatch;

机译：动态平衡;;并联SiC MOSFET ;;无源补偿;;阈值电压不匹配;

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专利

1. Evaluation method of threshold voltage shift of SiC MOSFETs under negative gate bias using n-type SiC MOS capacitors [J] . Ohashi Teruyuki, Iijima Ryosuke Japanese journal of applied physics . 2016,第2期

机译：使用n型SiC MOS电容器的负栅极偏置下SiC MOSFET阈值电压偏移的评估方法
2. Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability [J] . Puschkarsky K., Grasser T., Aichinger T., IEEE Transactions on Electron Devices . 2019,第11期

机译：以阈值电压不稳定性为重点的SiC MOSFET高压器件可靠性研究
3. Passive Balancing of Peak Currents Between Paralleled MOSFETs With Unequal Threshold Voltages [J] . Yincan Mao, Zichen Miao, Chi-Ming Wang, IEEE Transactions on Power Electronics . 2017,第5期

机译：阈值电压不相等的并联MOSFET之间峰值电流的无源平衡
4. Dynamic Sharing between Paralleled SiC MOSFETs Caused by Threshold Voltage Mismatch [C] . Yincan Mao, Zichen Miao, Khai D. T. Ngo COES annual conference . 2016

机译：阈值电压不匹配引起的并联SIC MOSFET之间的动态共享
5. Design and Control of Power Converters for Medium Voltage DC Applications Enabled by Medium Voltage SiC-MOSFETs [D] . Acharya, Sayan. 2019

机译：中电压SiC-MOSFET启用的中电压DC应用的功率转换器的设计与控制
6. Radiation Response of Negative Gate Biased SiC MOSFETs [O] . Akinori Takeyama, Takahiro Makino, Shuichi Okubo, 2019

机译：负栅偏置SiC MOSFET的辐射响应
7. Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-relaxation Method [O] . Mitsuru Sometani, Dai Okamoto, Shinsuke Harada, 2016

机译：用非弛豫方法精确表征4H-siC mOsFET的阈值电压不稳定性

Dynamic Sharing between Paralleled SiC MOSFETs Caused by Threshold Voltage Mismatch

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