Next generation planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with low specific on-resistance and high switching speed

机译：具有低导通电阻和高开关速度的下一代平面1700 V，20mΩ4H-SiC DMOSFET

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Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. Due to their fast switching speed, knee-free forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to replace silicon IGBTs in many high-power medium-voltage applications. 1700 V SiC MOSFETs have already been released to production at Wolfspeed based on its 2nd Gen technology. In this paper, we present our latest results in high voltage 4H-SiC MOSFET development. A low specific on-resistance of 4.7 mΩ·cm2 has been achieved on 1700 V, 20 mΩ 4H-SiC DMOSFETs at 25°C based on a 3rd generation planar MOSFET platform, which is less than half of the resistance of the previous generation devices. A detailed analysis has been carried out with respect to the static and dynamic characteristics, third quadrant conduction, and body diode reverse recovery charge, etc.

机译：仅提供摘要表格。完整的演示文稿未作为会议记录的一部分公开发布。由于其快速的开关速度，无拐点的正向特性以及坚固，低反向恢复的体二极管，SiC MOSFET是在许多大功率中压应用中替代硅IGBT的理想选择。 1700 V SiC MOSFET已经基于其第二代技术在Wolfspeed投入生产。在本文中，我们介绍了高压4H-SiC MOSFET开发的最新成果。基于第三代平面MOSFET平台，在25°C下于1700 V，20mΩ的4H-SiC DMOSFET上实现了4.7mΩ·cm2的低导通电阻，该电阻小于上一代器件的电阻的一半。已针对静态和动态特性，第三象限传导和体二极管反向恢复电荷等进行了详细分析。

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来源
《2016 European Conference on Silicon Carbide amp; Related Materials》|2016年|1-1|共1页
会议地点 Halkidiki(GR)
作者
Q. J. Zhang; G. Wang; C. Jonas; C. Capell; S. Pickle; P. Butler; D. Lichtenwalner; E. Van Brunt; S. Ryu; J. Richmond; B. Hull; J. Casady; S. Allen; J. Palmour;
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作者单位

Wolfspeed, a Cree Company, RTP, NC 27709, USA;

Wolfspeed, a Cree Company, RTP, NC 27709, USA;

Wolfspeed, a Cree Company, RTP, NC 27709, USA;

Wolfspeed, a Cree Company, RTP, NC 27709, USA;

Wolfspeed, a Cree Company, RTP, NC 27709, USA;

Wolfspeed, a Cree Company, RTP, NC 27709, USA;

Wolfspeed, a Cree Company, RTP, NC 27709, USA;

Wolfspeed, a Cree Company, RTP, NC 27709, USA;

Wolfspeed, a Cree Company, RTP, NC 27709, USA;

Wolfspeed, a Cree Company, RTP, NC 27709, USA;

Wolfspeed, a Cree Company, RTP, NC 27709, USA;

Wolfspeed, a Cree Company, RTP, NC 27709, USA;

Wolfspeed, a Cree Company, RTP, NC 27709, USA;

Wolfspeed, a Cree Company, RTP, NC 27709, USA;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Silicon carbide; MOSFET; Schottky diodes; Insulated gate bipolar transistors; Silicon; Switches;

机译：碳化硅; MOSFET;肖特基二极管;绝缘栅双极型晶体管;硅;开关;

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专利

1. Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed [J] . Q.J. Zhang, G. Wang, C. Jonas, Materials science forum . 2017,第期

机译：具有低导通电阻和高开关速度的下一代平面1700 V，20mΩ4H-SiC DMOSFET
2. Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications [J] . Donald A. Gajewski, Sei-Hyung Ryu, Mrinal Das, Materials science forum . 2014,第pta2期

机译：1200 V和1700 V 4H-SiC DMOSFET在下一代功率转换应用中的可靠性能
3. 2 KV 4H-SiC DMOSFETS FOR LOW LOSS, HIGH FREQUENCY SWITCHING APPLICATIONS [J] . Sei-Hyung Ryu, Sumi Krishnaswami, Mrinal Das, International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 2004,第3期

机译：用于低损耗，高频开关应用的2 KV 4H-SiC DMOSFET
4. Next generation planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with low specific on-resistance and high switching speed [C] . Q. J. Zhang, G. Wang, C. Jonas, European Conference on Silicon Carbide Related Materials . 2016

机译：下一代平面1700 V，20MΩ4H-SIC DMOSFET具有低特定的导通电阻和高开关速度
5. Design, Analysis, and Optimization of 1.2 kV 4H-SiC Planar-Gate Power MOSFETs for Improved High Frequency Switching [D] . Han, Kijeong. 2019

机译：1.2 kV 4H-SiC平面栅极功率MOSFET的设计，分析和优化，用于改进的高频切换
6. In vivo deep-brain blood flow speed measurement through third-harmonic generation imaging excited at the 1700-nm window [O] . Hongji Liu, Xinlin Chen, Xiangquan Deng, 2020

机译：通过在1700 nm窗口激发的三次谐波生成成像来进行体内深脑血流速度测量
7. An Improved 4H-SiC Trench MOS Barrier Schottky Diode With Lower On-Resistance [O] . Fei Cao, Meng-tian Bao, Xue Wu, 2019

机译：一种改进的4H-SIC沟槽MOS屏障肖特基二极管，导通电阻较低

Next generation planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with low specific on-resistance and high switching speed

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