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首页> 外文会议>2017 15th International Conference on Quality in Research : International Symposium on Electrical and Computer Engineering >A Statistical Study on the formation of a-few-dopant quantum dots in highly-doped Si nanowire transistors
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A Statistical Study on the formation of a-few-dopant quantum dots in highly-doped Si nanowire transistors

机译：高掺杂硅纳米线晶体管中少量掺杂量子点形成的统计研究

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摘要

Single-electron tunneling (SET) transistors have been studied for the past several decades because they are promising for low-power consumption and fundamental-level control of charge. The quantum dots (QDs) that are the main part of an SET transistor have been demonstrated in a variety of materials, but recently dopant-atoms in silicon have also been shown to work as QDs. However, a single conventional dopant-atom has usually a shallow ground state energy level below the conduction band edge (~45 meV). This means that the tunnel barrier is relatively low and thermally-activated current can flow over the barrier. Therefore, the operation of dopant-atom SET transistors remains limited to low temperatures. In this work, we statistically analyze the key factors for raising the SET operation temperature up to room temperature (>300 K).
机译：在过去的几十年中，单电子隧道（SET）晶体管得到了研究，因为它们有望实现低功耗和基本的电荷控制。作为SET晶体管主要部分的量子点（QD）已在多种材料中得到了证明，但近来硅中的掺杂原子也已被证明可以用作QD。但是，单个常规掺杂原子通常在导带边缘（〜45 meV）以下具有较浅的基态能级。这意味着隧道势垒相对较低，并且热激活电流可以流过势垒。因此，掺杂原子SET晶体管的操作仍然限于低温。在这项工作中，我们统计分析了将SET操作温度提高到室温（> 300 K）的关键因素。

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