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180nm HVIC technology for digital AC/DC power conversion

机译:用于数字AC / DC电源转换的180nm HVIC技术

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摘要

A new high-voltage integrated circuit (HVIC) technology has been developed and optimized for AC/DC power conversion applications that require increased digital content. This cost-effective process uses 3.3V CMOS and a 180nm backend process to provide about 10X greater digital circuit density compared to conventional 0.5um 5V CMOS solutions. Excellent analog circuit performance is maintained. For the first time, reliable 700V devices are demonstrated using shallow trench isolation (STI) oxide over a double-RESURF drift region.
机译:针对需要增加数字内容的AC / DC电源转换应用,已经开发并优化了一种新的高压集成电路(HVIC)技术。与传统的0.5um 5V CMOS解决方案相比,这种具有成本效益的工艺使用3.3V CMOS和180nm后端工艺来提供大约10倍的数字电路密度。保持了出色的模拟电路性能。首次展示了在双REsurf漂移区域上使用浅沟槽隔离(STI)氧化物的可靠700V器件。

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