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A snapback-free RC-IGBT with Alternating N/P buffers

机译:具有交替N / P缓冲器的无反冲RC-IGBT

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摘要

A 1200V-class Reverse Conducting IGBT with Alternating N+/P Buffers (AB) is proposed and its mechanism is investigated for the first time. The AB RC-IGBT features a buffer layer with alternately doped N+ and P regions. The AB is separated from the collector by a part of N-drift region. The P buffer serves as the electron barrier during the unipolar mode and forces the electrons to flow through the high-resistance N-drift region between the buffer and the collector. Consequently, the snapback is suppressed with a fairly small cell pitch of 30μm. In the blocking state, the P buffer is fully depleted while the N+ buffer is not fully depleted yet. Therefore, the electric field terminates in the buffer layer and a high BV is ensured. The turn-off loss of the proposed AB RC-IGBT is reduced by 20% compared with that of the conventional RC-IGBT for the same forward on-state voltage drop.
机译:提出了一种具有交替N + / P缓冲器(AB)的1200V级反向导通IGBT,并首次研究了其机理。 AB RC-IGBT的缓冲层具有交替掺杂的N +和P区。 AB通过N漂移区的一部分与集电极分离。 P缓冲器在单极模式下充当电子势垒,并迫使电子流经缓冲器和集电极之间的高电阻N漂移区。因此,以30μm的相当小的单元间距抑制了回跳。在阻塞状态下,P缓冲区已完全耗尽,而N +缓冲区尚未完全耗尽。因此,电场终止于缓冲层并且确保了高BV。在相同的正向导通压降下,与传统的RC-IGBT相比,建议的AB RC-IGBT的关断损耗降低了20%。

著录项

  • 来源
  • 会议地点 Sapporo(JP)
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Silicon;

    机译:硅;

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