Asymmetric superlattice quantum well infrared photodetector

机译：非对称超晶格量子阱红外光电探测器

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A particular asymmetric superlattice (SL) with a structural defect was designed to operate as a quantum well infrared photodetector with detection energies in the mid-infrared range. The asymmetric quantum well infrared photodetector is based on InGaAs/InAlAs quantum wells lattice matched to the InP substrate. Due to the device asymmetry, it can operates in the photovoltaic mode (zero applied bias), showing potential to work at high temperatures, as well as in the photoconductive mode (positive or negative biases). The photocurrent spectra depend on the direction of the applied bias. The experimental results are in excellent agreement with the calculated absorption spectra.

机译：具有结构缺陷的特殊非对称超晶格（SL）设计为用作量子阱红外光电探测器，其探测能量在中红外范围内。非对称量子阱红外光电探测器基于与InP衬底晶格匹配的InGaAs / InAlAs量子阱。由于器件的不对称性，它可以在光伏模式下（施加零偏压）工作，显示出在高温下工作的潜力，以及在光电导模式下（正偏压或负偏压）工作。光电流光谱取决于所施加偏压的方向。实验结果与计算的吸收光谱非常吻合。

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来源
《2017 32nd Symposium on Microelectronics Technology and Devices》|2017年|1-3|共3页
会议地点 Fortaleza(BR)
作者
P. H. Pereira; G. M. Penello; M. P. Pires; D. L. Sivco; C. Gmachl; P. L. Souza;
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作者单位

LabSem/CETUC, Pontificia Universidade Católica, Rio de Janeiro, Brazil;

DISSE, Instituto Nacional de Ciências e Tecnologia de Nanodispositivos Semicondutores, CNPq/INCT;

DISSE, Instituto Nacional de Ciências e Tecnologia de Nanodispositivos Semicondutores, CNPq/INCT;

Princeton University, Department of Electrical Engineering, Princeton, NJ, USA;

Princeton University, Department of Electrical Engineering, Princeton, NJ, USA;

LabSem/CETUC, Pontificia Universidade Católica, Rio de Janeiro, Brazil;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Photoconductivity; Absorption; Photovoltaic systems; Superlattices; Probability; Photodetectors;

机译：光电导;吸收;光伏系统;超晶格;概率;光电探测器;;

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专利

1. Progress in Symmetric and Asymmetric Superlattice Quantum Well Infrared Photodetectors [J] . Germano M. Penello, Pedro H. Pereira, Lesslie Guerra, Annalen der Physik . 2019,第6期

机译：对称和非对称超晶格量子井红外光电探测器的进展
2. A high performance quantum well infrared photodetector using superlattice-coupled quantum wells for long wavelength infrared detection [J] . Moon J., Li SS., Lee JH. Infrared physics and technology . 2003,第4期

机译：使用超晶格耦合量子阱的高性能量子阱红外光电探测器，用于长波长红外探测
3. Investigation of multi-color, broadband quantum well infrared photodetectors with digital graded superlattice barrier and linear-graded barrier for long wavelength infrared applications [J] . Lee JH., Tidrow MZ., Liu WK., Infrared physics and technology . 2001,第3a5期

机译：具有数字渐变超晶格屏障和线性渐变屏障的多色宽带量子阱红外光电探测器的研究，用于长波长红外应用
4. Asymmetric Superlattice quantum well infrared photodetector [C] . P. H. Pereira, G. M. Penello, M. P. Pires, Symposium on Microelectronics Technology and Devices . 2017

机译：不对称超晶格量子井红外光电探测器
5. Investigation of multicolor quantum well infrared photodetectors and type II superlattice infrared photodetectors. [D] . Moon, Junhee. 2004

机译：多色量子阱红外光电探测器和II型超晶格红外光电探测器的研究。
6. Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors [O] . Jianxin Chen, Qingqing Xu, Yi Zhou, 2011

机译：InAs / GaSb II型超晶格中波长红外光电探测器的生长与制备
7. Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication [O] . Noureddine Sfina, Naima Yahyaoui, Moncef Said, 2014

机译：基于P-I-N红外光电探测的应变Si / SiGe / Si超晶格中量子传输的模拟1.3 - 1.55μm光学通信

Asymmetric superlattice quantum well infrared photodetector

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