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首页> 外文期刊>Infrared physics and technology >Investigation of multi-color, broadband quantum well infrared photodetectors with digital graded superlattice barrier and linear-graded barrier for long wavelength infrared applications
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Investigation of multi-color, broadband quantum well infrared photodetectors with digital graded superlattice barrier and linear-graded barrier for long wavelength infrared applications

机译：具有数字渐变超晶格屏障和线性渐变屏障的多色宽带量子阱红外光电探测器的研究，用于长波长红外应用

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摘要

We report four different InGaAs/AlGaAs multi-color, broadband (BB) quantum well infrared photodetectors (QWIPs) with digital graded superlattice barrier (DGSLB) and linear-graded barrier (LGB) for long wavelength infrared (LWIR) detection. The two DGSLB-QWIPs were grown using compositionally DGSLB structures with GaAs/Al0.15Ga0.85As material system to create a staircase-like band gap variation in the barrier region. A BE spectral response (7-16 mum) was obtained under positive biases while a normal spectral response (lambda (p) = 11 mum) was obtained under negative biases in the BB-DGSLB-QWIP. A high sensitivity double barrier (DB)-DGSLB-QWIP with a thin undoped Al0.15Ga0.85As DB grown on both side of the quantum well has also been studied. A normal spectral response with peak wavelength at 12 mum was obtained in this device under both positive and negative biases. In addition, two InGaAs/AlGaAs QWIPs using AlxGa1-xAs LGB with and without AlGaAs DB layers have also been investigated. For the BB-LGB-QWIP, the BB spectral response was obtained under positive biases while the voltage-tunable multi-color detection with two peaks were obtained at negative biases. A very high responsivity was achieved in the DB-LGB-QWIP. (C) 2001 Published by Elsevier Science B.V. [References: 26]
机译：我们报告了四种不同的InGaAs / AlGaAs多色，宽带（BB）量子阱红外光电探测器（QWIPs），它们具有用于长波长红外（LWIR）检测的数字渐变超晶格屏障（DGSLB）和线性渐变光栅（LGB）。使用具有GaAs / Al0.15Ga0.85As材料系统的成分DGSLB结构生长两个DGSLB-QWIP，以在势垒区域中产生阶梯状的带隙变化。在BB-DGSLB-QWIP中，在正偏压下获得了BE光谱响应（7-16微米），而在负偏压下获得了正常光谱响应（λ（p）= 11微米）。还研究了一种高灵敏度双势垒（DB）-DGSLB-QWIP，其在量子阱的两侧均生长有未掺杂的薄Al0.15Ga0.85As DB。在该器件中，在正偏压和负偏压下均获得了峰值波长为12 mm的正常光谱响应。此外，还研究了两种使用AlxGa1-xAs LGB的InGaAs / AlGaAs QWIP，它们带有和不带有AlGaAs DB层。对于BB-LGB-QWIP，在正偏压下获得BB光谱响应，而在负偏压下获得具有两个峰值的电压可调多色检测。在DB-LGB-QWIP中实现了非常高的响应度。 （C）2001年由Elsevier Science B.V.出版[参考文献：26]

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