Analysis of bulk and accumulation mobilities in n- and p-type triple gate junctionless nanowire transistors

机译：n型和p型三栅极无结纳米线晶体管的体积和累积迁移率分析

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This paper studies the effective mobility in n- and p-type junctionless nanowire transistors (JNT) with variable fin width from quasi-planar to nanowire devices. JNTs electrical parameters were analyzed and the results show that smaller fin width have higher mobility while the mobility decreases for quasi-planar devices. Simulations were used to analyze the mobility showing that small fin devices reach higher mobility for smaller gate bias variation above the threshold voltage and a higher mobility in the middle of the channel due to the better electrostatic coupling compared to larger devices.

机译：本文研究了从准平面器件到纳米线器件的可变鳍宽的n型和p型无结纳米线晶体管（JNT）的有效迁移率。分析了JNTs的电参数，结果表明，对于准平面器件，较小的鳍片宽度具有较高的迁移率，而迁移率则降低。通过仿真分析迁移率，结果表明，与较大型器件相比，由于静电耦合更好，小型鳍片器件在阈值电压以上时，栅极偏置变化较小时，鳍片器件的迁移率更高；而在沟道中间，则迁移率较高。

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来源
《2017 32nd Symposium on Microelectronics Technology and Devices》|2017年|1-4|共4页
会议地点 Fortaleza(BR)
作者
T. A. Ribeiro; M. A. Pavanello; A. Cerdeira;
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作者单位

Department of Electrical Engineering, Centro Universitário FEI, São Bernardo do Campo, Brazil;

Department of Electrical Engineering, Centro Universitário FEI, São Bernardo do Campo, Brazil;

Sección de Electrónica de Estado Sólido, CINVESTAV-IPN, Ciudad de México, México;

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原文格式 PDF
正文语种 eng
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关键词
Logic gates; Threshold voltage; Scattering; Doping; Capacitance; Nanoscale devices; Transistors;

机译：逻辑门;阈值电压;散射;掺杂;电容;纳米器件;晶体管;;

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1. A Unified Analytical Current Model for N- and P-Type Accumulation-Mode (Junctionless) Surrounding-Gate Nanowire FETs [J] . Yu Y.S. Electron Devices, IEEE Transactions on . 2014,第8期

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2. Characteristic of p-Type Junctionless Gate-All-Around Nanowire Transistor and Sensitivity Analysis [J] . Han M.-H., Chang C.-Y., Jhan Y.-R., Electron Device Letters, IEEE . 2013,第2期

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3. Design and Analysis of Source Engineered with High Electron Mobility Material Triple Gate Junctionless Field Effect Transistor [J] . Shringi Shivangi, Raman Ashish, Singh Sarabdeep, Journal of Nanoelectronics and Optoelectronics . 2019,第6期

机译：具有高电子移动材料三栅极连接场效应晶体管的烃源设计与分析
4. Analysis of bulk and accumulation mobilities in n- and p-type triple gate junctionless nanowire transistors [C] . T. A. Ribeiro, M. A. Pavanello, A. Cerdeira Symposium on Microelectronics Technology and Devices . 2017

机译：N型三栅极连接纳米线晶体管中的散装和累积迁移率分析
5. Nanowire-based devices for electronic and optical applications: Solution-gated silicon nanowire field effect transistors and one-dimensional gold nanoparticle arrays [D] . Hu, Wenchong 2010

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6. Electrical property comparison and charge transmission in p-type double gate and single gate junctionless accumulation transistor fabricated by AFM nanolithography [O] . Arash Dehzangi, A Makarimi Abdullah, Farhad Larki, 2012

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Analysis of bulk and accumulation mobilities in n- and p-type triple gate junctionless nanowire transistors

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