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首页> 外文会议>2017 32nd Symposium on Microelectronics Technology and Devices >Comparative experimental study of the improved MOSFETs matching by using the hexagonal layout style
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Comparative experimental study of the improved MOSFETs matching by using the hexagonal layout style

机译：使用六边形布局样式改进的MOSFET匹配的对比实验研究

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摘要

On this study, it is described an experimental comparative analysis of the devices matching regarding a 360 Metal-Oxide-Semiconductor Silicon-On-Insulator (SOI) Field Effect Transistors, n-type (nMOSFETs) sample, which were implemented with a hexagonal (Diamond) and rectangular gate geometries. Considering some relevant electrical parameters studied in the paper, the results indicate that the Diamond SOI nMOSFETs with α angles equal to 53.1° and 90° is able to be considered an alternative devices to boost about, at least 30% in average, the devices matching regarding those observed with the rectangular SOI MOSFET counterparts, considering the same gate areas and also the bias conditions.
机译：在这项研究中，描述了对匹配的器件进行的实验比较分析，该器件与360型金属氧化物半导体绝缘体上硅（SOI）场效应晶体管，n型（nMOSFET）样品匹配，并采用六边形（菱形）和矩形门的几何形状。考虑到本文研究的一些相关电参数，结果表明，α角等于53.1°和90°的Diamond SOI nMOSFET可以被视为替代器件，以平均提升至少约30％的器件功率。考虑到使用矩形SOI MOSFET对应器件时所观察到的那些问题，请考虑相同的栅极面积以及偏置条件。

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