Study of the source/drain contact resistance effect in Ni/P3HT/PVA/Al OFETs on flexible substrates

机译：Ni / P3HT / PVA / Al OFETs在柔性衬底上源/漏接触电阻效应的研究

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Top gate-bottom contacts transistors of Poly 3-hexylthiophene and cross-linked Poly Vinyl Alcohol with different channel lengths (10, 20 and 40 μm) were fabricated on top of polyethylene-naphthalate films using standard photolithography and plasma etching. The transistors presented good characteristics at low voltages and excellent environmental stability. Transmission line method (TLM), based on Shockley model was applied to characterize the transistors. The contact resistance has a higher impact on short channel transistors performance. The shorter the channel length and the higher the semiconductor conductivity, the higher is the impact of contact resistance. On these cases, the use of TLM for parameter extraction becomes essential.

机译：在聚萘二甲酸乙二醇酯薄膜的顶部使用标准光刻和等离子蚀刻工艺制造了具有不同沟道长度（10、20和40μm）的聚3-己基噻吩和交联聚乙烯醇的顶部栅底接触晶体管。这些晶体管在低压下表现出良好的特性，并具有出色的环境稳定性。基于Shockley模型的传输线方法（TLM）被用于表征晶体管。接触电阻对短沟道晶体管的性能有较高的影响。沟道长度越短，半导体电导率越高，接触电阻的影响就越大。在这些情况下，必须使用TLM进行参数提取。

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来源
《2017 32nd Symposium on Microelectronics Technology and Devices》|2017年|1-4|共4页
会议地点 Fortaleza(BR)
作者
Eliana A. Van Etten; Gabriel V. Leite; Marco A. H. Vogt; Henri Boudinov;
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作者单位

Lapol, Escola de Engenharia, UFRGS, Porto Alegre, RS 91501-970, Brazil;

Laboratório de Microeletrônica, Instituto de Física, UFRGS, Porto Alegre, RS 91501-970, Brazil;

Laboratório de Microeletrônica, Instituto de Física, UFRGS, Porto Alegre, RS 91501-970, Brazil;

Laboratório de Microeletrônica, Instituto de Física, UFRGS, Porto Alegre, RS 91501-970, Brazil;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Logic gates; Contact resistance; OFETs; Films; Resistance; Lithography;

机译：逻辑门;接触电阻; OFET;膜;电阻;光刻;;

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1. Contact Resistance Effects in Ni Drain-Source P3HT/PVA OFETs [J] . Leite Gabriel Volkweis, Boudinov Henri Ivanov Journal of Electronic Materials . 2019,第2期

机译：NI漏极源P3HT / PVA的接触电阻效应
2. Novel Ni silicide formed with a Ni/Er/Ni/TiN structure for thermal stable and low contact resistance source/drain in MOSFETs [J] . Sung-Kwen Oh, Hong-Sik Shin, Meng Li, Japanese journal of applied physics . 2014,第8S3期

机译：具有Ni / Er / Ni / TiN结构的新型Ni硅化物可实现MOSFET中的热稳定和低接触电阻源/漏
3. Self-Aligned Carbon Nanotube Thin-Film Transistors on Flexible Substrates With Novel Source–Drain Contact and Multilayer Metal Interconnection [J] . Pham D. T., Subbaraman H., Chen M. Y., Nanotechnology, IEEE Transactions on . 2012,第1期

机译：具有新型源漏接触和多层金属互连的柔性基板上的自对准碳纳米管薄膜晶体管
4. Study of the source/drain contact resistance effect in Ni/P3HT/PVA/Al OFETs on flexible substrates [C] . Eliana A. Van Etten, Gabriel V. Leite, Marco A. H. Vogt, Symposium on Microelectronics Technology and Devices . 2017

机译：柔性基材上Ni / P3HT / PVA / Al源/漏极接触电阻效应的研究
5. Formation of low-resistivity germanosilicide contacts to phosphorus doped silicon-germanium alloy source/drain junctions for nanoscale CMOS. [D] . Mo, Hongxiang. 2004

机译：低电阻率的锗硅化物接触层形成了用于纳米级CMOS的磷掺杂的硅锗合金源/漏结。
6. Work Function Tuning in Two-Dimensional MoS2 Field-Effect-Transistors with Graphene and Titanium Source-Drain Contacts [O] . Seung Su Baik, Seongil Im, Hyoung Joon Choi -1

机译：带有石墨烯和钛源极-漏极触点的二维MoS2场效应晶体管的功函数调整
7. Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP 111 Substrate [O] . Kalna Karol 2017

机译：具有高al浓度和si-Hp 111衬底的alGaN / GaN HEmT的低源极/漏极接触电阻
8. Three-Dimensional Modelling for Contact Resistance of Current Flow into a Source/Drain Region [R] . Cumberbatch, E., Fang, W. 1988

机译：电流流入源/漏区接触电阻的三维建模

Study of the source/drain contact resistance effect in Ni/P3HT/PVA/Al OFETs on flexible substrates

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