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首页> 外文会议>2017 32nd Symposium on Microelectronics Technology and Devices >Mm-wave flip-chip fabrication process for MnM-based interposer interconnection
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Mm-wave flip-chip fabrication process for MnM-based interposer interconnection

机译：基于MnM的中介层互连的毫米波倒装芯片制造工艺

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摘要

This paper presents experimental results of a Flip Chip (FC) fabrication process. The FC technology is based on next generation fine pitch Cu Pillar bumping, which pitches less than 100 μm that support next generation communication devices at the mm-wave frequency range. The purpose of this article is to shed some light on the technical background and to highlight the key issues. This will be done from the point of view of the manufacturing process. It was shown that highly miniaturized Cu Pillar pitches and significantly Cu Pillar thickness can be obtained. Furthermore, this work aims to get advances in Cu Pillar fine pitch FC fabrication process that will be useful as integration technology within nanoporous alumina substrate - based interposer for the development of mm-wave devices. Accordingly, the article will discuss flip-chip fabrication process challenges in both Fine Cu Pillar fabrication and substrate-chip bonding.
机译：本文介绍了倒装芯片（FC）制造工艺的实验结果。 FC技术基于下一代微小间距Cu柱状凸点，其间距小于100μm，可支持毫米波频率范围内的下一代通信设备。本文的目的是阐明一些技术背景并重点介绍关键问题。这将从制造过程的角度来完成。结果表明，可以获得高度小型化的铜柱间距和明显的铜柱厚度。此外，这项工作旨在获得Cu Pillar细间距FC制造工艺的进步，该工艺将用作纳米多孔氧化铝基板（用于毫米波器件开发的中介层）内的集成技术。因此，本文将讨论在精细铜柱制造和衬底芯片接合中的倒装芯片制造工艺挑战。

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