Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy

著录项

• 来源
  《2017 32nd Symposium on Microelectronics Technology and Devices》|2017年|1-4|共4页
• 会议地点 Fortaleza(BR)
• 作者

  Marcelo R. Piton; Eero Koivusalo; Soile Suomalainen; Teemu Hakkarainen; S. Souto; Helder V. A. Galeti; Andreas Schramm; Y. Galvâo Gobato; Mircea Guina;

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• 作者单位

  Optoelectronics Research Centre, Tampere University of Technology, Tampere, Finland;

  Optoelectronics Research Centre, Tampere University of Technology, Tampere, Finland;

  Optoelectronics Research Centre, Tampere University of Technology, Tampere, Finland;

  Optoelectronics Research Centre, Tampere University of Technology, Tampere, Finland;

  FZEA/ZAB, University of São Paulo, Pirassununga-SP, Brazil;

  Electrical Engineering Department, Federal University of São Carlos, São Carlos-SP, Brazil;

  Electronics and Communications Engineering, Tampere University of Technology, Tampere, Finland;

  Physics Department, Federal University of São Carlos, Sâo Carlos-SP, Brazil;

  Optoelectronics Research Centre, Tampere University of Technology, Tampere, Finland;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Gallium arsenide; Nanowires; Doping; Substrates; Silicon; Contacts; Metals;

  机译：砷化镓;纳米线;掺杂;基底;硅;触点;金属;;