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Self-catalyzed core-shell GaAs/GaNAs nanowires grown on patterned Si (111) by gas-source molecular beam epitaxy

机译:通过气源分子束外延在图案化Si(111)上生长的自催化核壳GaAs / GaNAs纳米线

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摘要

We report structural studies on the epitaxial growth of GaAs/GaNAs core-shell nanowires (NWs) on patterned Si (111) substrates by self-catalyzed selective area growth using Gas-Source Molecular Beam Epitaxy. Epitaxial growth conditions were obtained using a combination of dry and time-sensitive wet etching of the SiO_2 growth mask and native SiO_2 layer, respectively. We found that higher growth temperatures resulted in a higher yield for the epitaxial growth of patterned self-catalyzed GaAs NWs on Si with an optimal temperature of 690 °C. The GaNAs shell growth at 500 °C was found to be conformal and maintained an epitaxial and dislocation-free interface with both the Si substrate and the GaAs nanowire. The micro-photoluminescence (u-PL) measurement at 6 K revealed two bands peaking at 1.45 and 1.17 eV, which could be emission from the GaAs core and GaNAs shell. Transmission electron microscopy showed the zincblende crystal structure of GaAs and GaAs/GaNAs core-shell NWs with minimal twinning near the base of the GaAs nanowires and at the tips of the GaAs/GaNAs core/shell nanowires. This study illustrates the feasibility of the epitaxial growth of patterned GaAs with dilute nitride shells on Si substrates,which would have potential for Si-friendly intermediate band solar cells and telecom emitters.
机译:我们报告结构化研究的GaAs / GaNAs核-壳纳米线(NWs)在图案化的Si(111)衬底上通过使用气体源分子束外延自催化的选择性区域生长进行外延生长。分别使用干法刻蚀和时间敏感的湿法刻蚀SiO_2生长掩模和天然SiO_2层的组合来获得外延生长条件。我们发现,较高的生长温度可在690°C的最佳温度下在Si上外延生长图案化的自催化GaAs NW的外延生长。发现GaNAs在500°C时的壳生长是保形的,并与Si衬底和GaAs纳米线保持外延和无位错界面。在6 K下的微光致发光(u-PL)测量显示出两个分别在1.45和1.17 eV处达到峰值的谱带,这可能是GaAs核和GaNAs壳发射的。透射电子显微镜显示GaAs和GaAs / GaNAs核-壳NW的闪锌矿晶体结构在GaAs纳米线的基部附近和GaAs / GaNAs核/壳纳米线的尖端具有最小的孪晶。这项研究说明了在硅衬底上外延生长带有稀氮化物壳的图案化砷化镓的可行性,这对于硅友好的中频太阳能电池和电信发射器具有潜力。

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  • 来源
    《Applied Physics Letters》 |2017年第7期|072106.1-072106.5|共5页
  • 作者单位

    Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla,California 92093, USA;

    Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla,California 92093, USA;

    Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla,California 92093, USA;

    Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla,California 92093, USA;

    Department of Physics, Chemistry and Biology, Linkoping University, Linkoping 58183, Sweden;

    Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla,California 92093, USA;

    Department of Physics, Chemistry and Biology, Linkoping University, Linkoping 58183, Sweden;

    Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla,California 92093, USA ,Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla,California 92093, USA;

    Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla,California 92093, USA ,Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla,California 92093, USA ,Department of NanoEngineering, University of California, San Diego, La Jolla, California 92093, USA;

    Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla,California 92093, USA ,Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla,California 92093, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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