• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>2017 32nd Symposium on Microelectronics Technology and Devices >Subthreshold region analysis for UTBOX and UTBB SOI nMOSFETs with different channel lengths and silicon thickness
【24h】

Subthreshold region analysis for UTBOX and UTBB SOI nMOSFETs with different channel lengths and silicon thickness

机译：具有不同沟道长度和硅厚度的UTBOX和UTBB SOI nMOSFET的亚阈值区域分析

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This paper presents an experimental analysis of the influence of the silicon thickness (tsi)and the channel length (L) on the threshold voltage (Vt), subthreshold swing (SS), drain induced barrier lowering (DIBL), gate induced drain leakage (GIDL) and the ON-state over OFF-state current ratio (ION/IOFF))on Ultra Thin Buried Oxide (UTBOX) and Ultra Thin Body and Buried oxide (UTBB) SOI nMOSFET devices. In order to complement this analysis, a simulation of the UTBB devices was performed. Devices with thinner silicon film present better control of short channel effects resulting in improved parameters such as SS(tsi=50nm → ~ 85-90 mV/dec; tsi=20nm → ~ 70-80 mV/dec), DIBL(tsi=50nm → ~ 130-150 mV/V; tsi=20nm → ~ 25-40 mV/V), GIDL and a reduction of the channel length influence on them. When comparing the UTBB devices without and with ground plane implantation (GP) it was noted that the GP did not affect the DIBL and GIDL parameters, but it increases Vt (~0.25V without GP and ~0.45V with GP), degrades SS and improves Ion/Ioff (from ~ 105 without GP to ~108 with GP).
机译：本文对硅厚度（t si ）和沟道长度（L）对阈值电压（V t ），亚阈值摆幅（ SS），漏极引起的势垒降低（DIBL），栅极引起的漏极泄漏（GIDL）以及导通状态与截止状态电流比（I ON / I OFF ） ），超薄埋氧化物（UTBOX）和超薄埋氧化物（UTBB）SOI nMOSFET器件。为了补充此分析，对UTBB器件进行了仿真。硅膜较薄的器件可更好地控制短沟道效应，从而改善参数，例如SS（t si = 50nm→〜85-90 mV / dec; t si = 20nm→〜70-80 mV / dec），DIBL（t si = 50nm→〜130-150 mV / V; t si = 20nm→〜25-40 mV / V），GIDL和通道长度的减小对它们的影响。比较不带接地平面（GP）和不带接地平面植入（UT）的UTBB器件时，GP不会影响DIBL和GIDL参数，但是会增加V t （不带GP的〜0.25V和〜0.45带GP的V），降低SS并改善I on / I off （从不带GP的〜10 5 提升至〜10 8 < / sup>与GP）。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号