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2- Transistor Schmitt Trigger based on 2D Electrostrictive Field Effect Transistors

机译：基于2D电致伸缩场效应晶体管的2-晶体管施密特触发器

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The 2D Electrostrictive FET (2D EFET) is a steep switching device that operates on the principle of dynamic bandgap (Eo) modulation of 2D channel enabled by voltage induced strain transduction [1]. However, the steep switching comes with its own overheads such as increased capacitance. Further, 2D-EFETs offer distinct features, such as a back terminal with unique control of device characteristics. To overcome the limitations of 2D EFETs, their unique behavior needs to be judiciously capitalized. In this work, we propose a 2-Transistor Schmitt Trigger (ST) based on 2D-EFETs utilizing the dynamicn$E_{G}$nreduction and the resultant drive strength modulation driven byn$V_{B}$n. (Fig. 1). We show the significance of circuit-driven device optimization to enable 2D-EFET based ST employing just two transistors.

机译：2D电致伸缩FET（2D EFET）是一种陡峭的开关器件，其原理是通过电压感应应变转换[2]对2D通道进行动态带隙（Eo）调制。但是，陡峭的开关有其自身的开销，例如电容增加。此外，2D-EFET提供独特的功能，例如具有对设备特性的独特控制的后端。为了克服2D EFET的局限性，需要谨慎地利用其独特的行为。在这项工作中，我们建议使用dynamicn $E_{G}$nreduction和由n $ V_ {B} $ n。（图。1）。我们展示了电路驱动设备优化对仅使用两个晶体管的基于2D-EFET的ST的重要性。

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来源
《2018 76th Device Research Conference》|2018年|1-2|共2页
会议地点 Santa Barbara(US)
作者
Niharika Thakuria; Daniel Schulmarr; Saptarshi Das; Sumeet Kumar Gupta;
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作者单位

Purdue University, West Lafayette, IN;

Purdue University, West Lafayette, IN;

Penn State University, University Park, PA, USA;

Purdue University, West Lafayette, IN;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Two dimensional displays; Modulation; Field effect transistors; Ions; Hysteresis; Delays; Capacitance;

机译：二维显示;调制;场效应晶体管;离子;磁滞;延迟;电容;;

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专利

1. Two Dimensional Electrostrictive Field Effect Transistor (2D-EFET): A sub-60mV/decade Steep Slope Device with High ON current [J] . Saptarshi Das Scientific reports. . 2016,第1期

机译：二维电致伸缩场效应晶体管（2D-EFET）：60mV /十倍以下陡峭斜率器件，具有高导通电流
2. Schmitt Trigger Using a Self-Healing Ionic Liquid Gated Transistor [J] . Bubel Simon, Menyo Matthew S., Mates Thomas E., Advanced Materials . 2015,第21期

机译：使用自修复离子液体门控晶体管的施密特触发器
3. Electrostrictive Tunable Capacitors and High-Performance 2D Crystal Transistors for Energy-Efficient Applications [J] . Raj K. Jana, Gregory L. Snider IEEE Electron Device Letters . 2016,第3期

机译：适用于节能应用的电致伸缩可调电容器和高性能2D晶体晶体管
4. 2- Transistor Schmitt Trigger based on 2D Electrostrictive Field Effect Transistors [C] . Niharika Thakuria, Daniel Schulmarr, Saptarshi Das, Device Research Conference . 2018

机译：2晶体管施密特触发基于2D电致伸缩场效应晶体管
5. Electronic Transport and Low Frequency Noise Characterization in Si Nanowire and 2- dimensional MoS2 based Field-effect Transistors. [D] . Sharma, Deepak K. 2014

机译：Si纳米线和基于二维MoS2的场效应晶体管中的电子传输和低频噪声表征。
6. Two Dimensional Electrostrictive Field Effect Transistor (2D-EFET): A sub-60mV/decade Steep Slope Device with High ON current [O] . Saptarshi Das -1

机译：二维电致伸缩场效应晶体管（2D-EFET）：60mV /十倍以下陡峭斜率器件具有高导通电流
7. Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019) [O] . Geonyeop Lee, Stephen J. Pearton, Fan Ren, 2019

机译：异结双极晶体管：具有高电流扩增的2D基于材料的垂直双相杂交双极晶体管（ADV。电子。Matter。3/2019）

2- Transistor Schmitt Trigger based on 2D Electrostrictive Field Effect Transistors

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