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首页> 外文会议>2018 76th Device Research Conference >First demonstration of vacuum-sealed fully integrated BEOL-compatible field emission devices for Si integrated high voltage applications
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First demonstration of vacuum-sealed fully integrated BEOL-compatible field emission devices for Si integrated high voltage applications

机译：首次演示用于Si集成高压应用的真空密封的完全集成BEOL兼容场发射器件

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摘要

CMOS-integrated high voltage devices are needed for applications in sensors / actuators and power systems. Current high voltage technologies based on GaN and SiC are not easily integrated with silicon CMOS [1]–[2]. Vacuum nanoelectronic devices based on field emission are a promising alternative approach for achieving high voltage devices on Si. Because vacuum serves as the electron transport medium, the blocking voltages in these devices can be much higher than their solid-state counterparts [3]. To date, however, there have been very few reports of fully integrated field emitters, most of which require high vacuum operation, are not CMOS-compatible and demonstrate poor scalability [4]–[6]. Here, we demonstrate the first vacuum-sealed fully integrated diode and triode field emission arrays that are developed in a scalable, BEOL-compatible process directly on Si. We extensively characterize both diode and triode arrays, demonstrating gate modulated field emission in the on-state and blocking voltages of200V.
机译：传感器/执行器和电源系统中的应用需要集成CMOS的高压设备。当前基于GaN和SiC的高压技术不容易与硅CMOS集成[1] – [2]。基于场发射的真空纳米电子器件是在Si上实现高压器件的一种有前途的替代方法。由于真空用作电子传输介质，因此这些器件中的阻断电压可能比其固态对应物高得多[3]。然而，迄今为止，几乎没有关于完全集成的场致发射器的报道，其中大多数要求高真空操作，与CMOS不兼容并且显示出较差的可扩展性[4] – [6]。在这里，我们演示了第一个真空密封的完全集成的二极管和三极管场发射阵列，它们是在可扩展的，与BEOL兼容的过程中直接在Si上开发的。我们广泛地描述了二极管和三极管阵列的特性，展示了导通状态下的栅极调制场发射和200V的阻断电压。

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