Analysis and design of dickson charge pump for EEPROM in 180nm CMOS technology

机译：用于180nm CMOS技术的EEPROM Dickson电荷泵的分析与设计

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This paper presents an analysis and design of Dickson charge pump for EEPROM in 180 nm CMOS technology. The new Dickson Charge Pump is the security sub chip to encrypts/decrypts the data, for this reason we need an EEPROM to write a secret key which must be programmed on chip by the “Dickson Charge Pump”. This Dickson charge pump consists of several blocks, Pre-regulator, Dickson 6-stage, Clock generator and Comparator, it generates an output voltage V_out= 11,25V according to a variable input voltage between 2,7V and 4,4V. The layout occupies a small active area of 32.80um × 46.90um in CMOS 180nm.

机译：本文介绍了用于180 nm CMOS技术的EEPROM的Dickson电荷泵的分析和设计。新的Dickson电荷泵是用于加密/解密数据的安全子芯片，因此，我们需要EEPROM写入密钥，该密钥必须由“ Dickson电荷泵”在芯片上进行编程。该Dickson电荷泵由几个模块组成，包括预调节器，Dickson 6级，时钟发生器和比较器，它产生输出电压V \ n _{out \ n = 11,25V（根据2.7V至7,000V之间的可变输入电压） 4,4V。在CMOS 180nm中，该布局占据了32.80um×46.90um的小有源区域。}

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来源
《2018 International Conference on Intelligent Systems and Computer Vision》|2018年|1-5|共5页
会议地点 Fez(MA)
作者
Mustapha El Alaoui; Fouad Farah; Karim El Khadiri; Hassan Qjidaa; Abdellah Aarab; Rachid El Alami; Ahmed Lakhassassi;
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作者单位

Electronics, Signals, Systems and Computer Science Laboratory (LESSI), Faculty of Sciences, Sidi Mohamed Ben Abbellah University, Fez, Morocco;

Electronics, Signals, Systems and Computer Science Laboratory (LESSI), Faculty of Sciences, Sidi Mohamed Ben Abb;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Charge pumps; Clocks; Generators; EPROM; Transient analysis; Solid state circuits; CMOS technology;

机译：电荷泵;时钟;发生器; EPROM;瞬态分析;固态电路; CMOS技术;;
入库时间 2022-08-26 14:31:55

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Analysis and design of dickson charge pump for EEPROM in 180nm CMOS technology

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