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首页> 外文会议>22nd Annual Semiconductor Pure Water and Chemicals Conference Feb 17-19, 2003 Santa Clara, CA >STI Ceria Slurries: Challenges for Post CMP Cleaning Processes
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STI Ceria Slurries: Challenges for Post CMP Cleaning Processes

机译：STI Ceria浆料：CMP后清洁工艺的挑战

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Chemical mechanical planarization (CMP) is an established semiconductor process step for the integrated production of logic and memory devices on silicon wafers. The STI (Shallow Trench Insulation) polishing process involves planarizing CVD silicon oxide films as part of the gate oxide structure. Both silica and ceria-type slurries have been used for this process. Certain new ceria slurries appear to achieve STI pattern planarization with minimal oxide erosion. There has been some concern that ceria ions (besides other metal ions) will be adsorbed onto the very sensitive STI structure and effect the device performance. This paper examines whether there are effective chemical methods for removing cerium contamination (ionic and particle). This paper discusses initial results for the performance of hydrogen peroxide and Buffered Chelating Solutions (BCS) used with single wafer post-CMP cleaning equipment with either megasonic or brush or a combination of both in reducing metal ion and ceria particle contamination. Without this information it will be difficult to develop aggressive post-CMP processes that can utilize DI water more effectively (lower consumption, higher recycle/reclaim water rates, and reduced chemical usage). The effectiveness of these post-CMP buffered chelating solutions (pH 4.2 and 7.5) for reducing metal ion contamination during the ceria slurry cleaning process has been demonstrated with Vapor Phase Decomposition-Inductively Coupled Plasma/Mass Spectra (VPD-ICP/MS) data. The ceria contamination can be reduced from 9E10 to 2E8 atoms/cm~2. These solutions can also remove other trace metal ions. The data also shows that cerium particles can be removed from wafer surfaces (98+%) with various BCS/hydrogen peroxide solutions, but there are at least four factors that must be understood when developing a post-CMP chemistry for ceria. The chemistry to be used and the mechanical process (brush or megasonic methods) are some of the important considerations. Other important factors include the chemistry's redox potential and finally, the mass transport (contact time) of the chemistries with the particles. Other chemistries, with pH ranging from 1 to 8.5, (sulfuric acid/hydrogen peroxide, and BSC, (pH 8.5) and hydrogen peroxide) are also discussed. Initial results also suggest that time (and water) consuming processes can be modified with these dilute chelating/peroxide chemicals in single-wafer cleaning equipment.
机译：化学机械平面化（CMP）是在硅片上集成生产逻辑和存储设备的既定半导体工艺步骤。 STI（浅沟槽绝缘）抛光工艺涉及平坦化CVD氧化硅膜，作为栅极氧化结构的一部分。二氧化硅和二氧化铈型浆料都已用于该工艺。某些新型的二氧化铈浆料似乎可以实现STI图案的平面化，并且氧化物的侵蚀最小。人们一直担心二氧化铈离子（其他金属离子除外）将被吸附到非常敏感的STI结构上并影响器件性能。本文研究了是否存在去除铈污染（离子和颗粒）的有效化学方法。本文讨论了用于单晶片后CMP清洗设备的过氧化氢和缓冲螯合溶液（BCS）的初步结果，该清洗设备采用超音速或刷子或两者结合使用，可减少金属离子和二氧化铈颗粒污染。没有这些信息，将很难开发出可更有效地利用去离子水的积极的CMP后工艺（更低的消耗量，更高的循环/再生水使用率以及减少的化学用量）。通过气相分解-电感耦合等离子体/质谱（VPD-ICP / MS）数据证明了这些CMP后缓冲的螯合溶液（pH 4.2和7.5）对于减少二氧化铈浆料清洁过程中金属离子污染的有效性。氧化铈污染可从9E10减少到2E8原子/ cm〜2。这些溶液还可以去除其他痕量金属离子。数据还显示，可以使用各种BCS /过氧化氢溶液从晶圆表面去除铈颗粒（98％以上），但是在开发用于二氧化铈的CMP后化学方法时，必须至少了解四个因素。重要的考虑因素包括要使用的化学方法和机械过程（刷子或兆声波方法）。其他重要因素包括化学物质的氧化还原电势，最后是化学物质与颗粒之间的质量传递（接触时间）。还讨论了pH范围为1至8.5的其他化学试剂（硫酸/过氧化氢和BSC（pH 8.5）和过氧化氢）。初步结果还表明，可以用单晶圆清洗设备中的这些稀释的螯合/过氧化物化学品来改变耗时（和耗水）的过程。

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