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首页> 外文会议>22nd Annual Semiconductor Pure Water and Chemicals Conference Feb 17-19, 2003 Santa Clara, CA >Selective Wet Etching for High-K Material by Organic Solvent Containing Hydrofluoric Acid
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Selective Wet Etching for High-K Material by Organic Solvent Containing Hydrofluoric Acid

机译：含氢氟酸的有机溶剂对高K材料的选择性湿蚀

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High-k gate materials such as hafnium dioxide (HfO_2) and zirconium dioxide (ZrO_2) will replace traditional silicon dioxide (SiO_2) in the gate structure at the 65nm technology node. However, traditional wet chemistries, such as buffered oxide etchant(BOE), that is used to etch SiO_2 gate material, cannot etch high-k material at production rate and with selectivity. The selectivity between the SiO_2 of shallow trench isolation (STI) and the high-k gate material requires less than 4. In this work, we studied the relationship between the HfO_2 etching rate and the selectivity (HfO_2/thermal-SiO_2) by using an organic solvent containing hydrofluoric acid (HF). Reducing the H_2O concentration in the solvent decreased the thermal-SiO_2 (THOX) etching rate. As a result, we have developed a new etchant for the high-k gate material. This new etchant can etch the HfO_2 higher than the production etching rate(5A/min) and keep the selectivity less than 4(THOX/HfO_2) compared to the dilute-HF(THOX/HfO_2>800). This new etchant is expected to be applied to the wet-etch process for high-k gate materials.
机译：高k栅极材料，例如二氧化ha（HfO_2）和二氧化锆（ZrO_2），将取代65nm技术节点处栅极结构中的传统二氧化硅（SiO_2）。但是，传统的湿化学方法（例如用于蚀刻SiO_2栅极材料的缓冲氧化物蚀刻剂（BOE））不能以生产率和选择性来蚀刻高k材料。浅沟槽隔离（STI）的SiO_2和高k栅极材料之间的选择性要求小于4。在这项工作中，我们通过使用Af研究了HfO_2刻蚀速率与选择性（HfO_2 / thermal-SiO_2）之间的关系。含有氢氟酸（HF）的有机溶剂。降低溶剂中的H_2O浓度会降低热SiO_2（THOX）蚀刻速率。结果，我们开发了一种用于高k栅极材料的新型蚀刻剂。与稀HF（THOX / HfO_2> 800）相比，这种新的蚀刻剂可以蚀刻出高于生产蚀刻速率（5A / min）的HfO_2，并保持选择性小于4（THOX / HfO_2）。这种新的蚀刻剂有望用于高k栅极材料的湿法蚀刻工艺。

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