Fabrication of a Single-electron Transistor with Mesoscopic Tunnel Junctions

机译：具有介观隧道结的单电子晶体管的制造

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We developed SETs made by aluminum electrodes and AI/AIOx/AI tunnel junctions, and tested their behavior at 0.3 K in the superconducting regime. The devices are fabricated using a double-angle evaporation through a suspended resist mask, defined by electron-beam lithography (shadow mask and tilted evaporation technique). By exploiting the shadow effect, we can reduce the junction dimensions and achieve a figure of 70 nm for the junction side. In this work we will show our experimental results both on the fabrication and on the performance of the superconducting single-electron transistors.

机译：我们开发了由铝电极和AI / AIOx / AI隧道结制成的SET，并在超导状态下测试了它们在0.3 K下的行为。使用通过悬浮抗蚀剂掩模的双角度蒸发来制造器件，该掩模由电子束光刻技术（阴影掩模和倾斜蒸发技术）定义。通过利用阴影效应，我们可以减小结尺寸，并在结侧获得70 nm的图形。在这项工作中，我们将展示关于超导单电子晶体管的制造和性能的实验结果。

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来源
《2nd International EUSPEN Conference on Precision Engineering Nanotechnology Vol.1, May 27th-31st, 2001, Turin, Italy》|2001年|p.62-65|共4页
会议地点 Turin(IT)
作者
G. Torrioli; B. Buonomo; P. Carelli; M.G. Castellano; F. Chiarello; C. Cosmelli; R. Leoni; F. Mattioli;
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作者单位

IESS-CNR, Roma, Italy;

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原文格式 PDF
正文语种 eng
中图分类机械、仪表工业;
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专利

1. Fabrication of tunnel junctions for direct detector arrays with single-electron transistor readout using electron-beam lithography [J] . Stevenson T.R., Wen-Ting Hsieh, Li M.J., IEEE Transactions on Applied Superconductivity . 2003,第2期

机译：使用电子束光刻技术制造具有单电子晶体管读数的直接探测器阵列的隧道结
2. Fabrication of tunnel junctions for direct detector arrays with single-electron transistor readout using electron-beam lithography [J] . Stevenson T.R., Wen-Ting Hsieh, Li M.J., IEEE Transactions on Applied Superconductivity . 2003,第2期

机译：使用电子束光刻技术制造具有单电子晶体管读数的直接探测器阵列的隧道结
3. Fabrication and Characterization of Single-Electron Transistors Based on A1/A1CVA1 and Nb/AlOx/Nb Tunnel Junctions [J] . K. Bliithner, M. Gotz, W. Krech, Journal de Physique, IV: Proceedings of International Conference . 1996,第3期

机译：基于A1 / A1CVA1和Nb / AlOx / Nb隧道结的单电子晶体管的制造与表征
4. Fabrication of a Single-electron Transistor with Mesoscopic Tunnel Junctions [C] . euspen European society for precision engineering and nanotechnology International Conference, european society for precision engineering and nanotechnology . 2001

机译：用介绍隧道结的单电子晶体管制造
5. SQUID array measurements of mesoscopic current noise and superconducting single-electron transistors. [D] . Steinbach, Andrew Harvey. 1998

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6. Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40 less area using shared-control transistor structure [O] . D. Suzuki, M. Natsui, A. Mochizuki, -1

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Fabrication of a Single-electron Transistor with Mesoscopic Tunnel Junctions

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