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首页> 外文会议>2nd International EUSPEN Conference on Precision Engineering Nanotechnology Vol.1, May 27th-31st, 2001, Turin, Italy >Nano-Defects Detection of Si Wafer Surface Using Evanescent Light -Computer Simulation by Means of FDTD Method
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Nano-Defects Detection of Si Wafer Surface Using Evanescent Light -Computer Simulation by Means of FDTD Method

机译：E逝光检测硅晶圆表面的纳米缺陷-FDTD方法的计算机模拟

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摘要

A new optical detection method for evaluating the nano-defects existing on and beneath the silicon wafer surface is proposed, which is applicable to an inspection technique of silicon wafers for next device generation of semiconductors. In this method, defects are evaluated not by using scattered light like conventional method, but by using evanescent light based on near-field optics. In this paper, in order to verify the feasibility of this proposed method, computer simulation was performed by means of FDTD method based on Maxwell's equations. The results showed that the proposed method is effective for detecting nano-defects existing on and beneath the silicon wafer surface with high sensitivity.
机译：提出了一种新的光学检测方法，用于评估存在于硅片表面及其下方的纳米缺陷，该方法可应用于下一代半导体器件的硅片检查技术。在这种方法中，不是通过像常规方法那样使用散射光来评估缺陷，而是使用基于近场光学器件的e逝光来评估缺陷。为了验证该方法的可行性，本文采用基于麦克斯韦方程的FDTD方法进行了计算机仿真。结果表明，所提出的方法对于高灵敏度检测硅晶片表面及其下方存在的纳米缺陷是有效的。

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