Nanoscale patterning of thin aluminum film using AFM lithography

机译：使用AFM光刻对铝薄膜进行纳米级图案化

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We report our results in patterning Si and SiGe substrates using aluminum based masks fabricated by atomic force microscopy local oxidation. A sputtered aluminum film is used for the mask fabrication and the mask pattern is transferred onto the substrate by reactive ion etching with a sub-100 nm resolution.

机译：我们报告了通过使用原子力显微镜局部氧化制造的铝基掩模在Si和SiGe衬底上构图的结果。将溅射的铝膜用于掩模制造，并且通过反应离子蚀刻以低于100 nm的分辨率将掩模图案转移到基板上。

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来源
《2nd International EUSPEN Conference on Precision Engineering Nanotechnology Vol.1, May 27th-31st, 2001, Turin, Italy》|2001年|p.172-174|共3页
会议地点 Turin(IT)
作者
A. Notargiacomo; V. Foglietti; F. Evangelisti;
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作者单位

Unita INFM, Dipartimento di Fisica "E. Amaldi", Universita di Roma TRE, Roma, Italy;

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原文格式 PDF
正文语种 eng
中图分类机械、仪表工业;
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Nanoscale patterning of thin aluminum film using AFM lithography

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