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Effect of Oxide Assisted Metal Nanoparticles on Microstructure and Morphology of Gallium oxide Nanowires

机译:氧化物辅助金属纳米粒子对氧化镓纳米线微观结构和形态的影响

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Several researches have been reported about the characteristic of β-Ga2O3 nanowires which was synthesized on nickel oxide particle. But indeed, recent researches about synthesis of β-Ga2O3 nanowires on oxide-assisted transition metal are limited to nickel or cobalt oxide catalyst. In this work, Gallium oxide (β-Ga2O3 ) nanowires were synthesized by a simple thermal evaporation method from gallium powder in the range of 700 - 1000℃ using the iron, nickel, copper, cobalt and zinc oxide as a catalyst, respectively. The β-Ga2O3 nanowires with single crystalline without defects were successfully synthesized at the reaction temperature of 850, 900 and 950℃ in all the catalysts. But optimum experimental condition in synthesis of nanowires varied with the kind of catalyst. As increasing synthesis temperature,the morphology of gallium oxide nanowires changed from nanowires to nanorods, and its diameter increased. From these results, we could be proposed that the growth mechanism of β-Ga2O3 nanowires was changed with synthesis temperature of nanowires. Microstructure and morphology of Synthesized nanowire was characterized by HR-TEM, FE-SEM, EDX and XRD.
机译:关于在氧化镍颗粒上合成的β-Ga2O3纳米线的特性,已有一些研究报道。但是确实,关于在氧化物辅助过渡金属上合成β-Ga2O3纳米线的最新研究仅限于镍或氧化钴催化剂。在这项工作中,使用铁,镍,铜,钴和氧化锌分别作为催化剂,通过简单的热蒸发方法,从700-1000℃范围内的镓粉中合成了氧化镓(β-Ga2O3)纳米线。在所有催化剂中,分别在850、900和950℃的反应温度下成功合成了无缺陷的单晶β-Ga2O3纳米线。但是,合成纳米线的最佳实验条件随催化剂的种类而变化。随着合成温度的升高,氧化镓纳米线的形态从纳米线变为纳米棒,其直径增大。从这些结果,我们可以提出β-Ga2O3纳米线的生长机理随着纳米线的合成温度而改变。通过HR-TEM,FE-SEM,EDX和XRD表征了合成纳米线的微观结构和形貌。

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