Zeeman Effect of D_1 Bound Exciton in 4H-SiC

机译：D_1束缚激子在4H-SiC中的塞曼效应

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The Zeeman behavior of the D_1 photoluminescence (PL) lines is found to be angular and polarization dependent. From the magnetic splitting, the electronic fine structure of the D_1 bound exciton (BE) is obtained. Besides the L, M and H levels, there exist three other L_H, L_L and N energy levels. Based on thermalization behavior, it is deduced that the Zeeman splitting of the D_1 PL lines originates from the initial states of the luminescence process. This result supports that the D_1 defect is an isoelectronic center. We complement our experimental results by some general considerations concerning the symmetry of the BE.

机译：发现D_1光致发光（PL）线的塞曼行为与角度和偏振有关。通过磁分裂获得D_1束缚激子（BE）的电子精细结构。除了L，M和H能级外，还有其他三个L_H，L_L和N能级。基于热行为，推论出D_1 PL线的塞曼分裂起源于发光过程的初始状态。该结果支持D_1缺陷是一个等电子中心。我们通过一些关于BE对称性的一般考虑对实验结果进行补充。

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《3rd European Conference on Silicon Carbide and Related Materials, ECSCRM2000 September 3-7 2000 Kloster Banz, Germany.》|2000年|p.361-364|共4页
会议地点 Kloster Banz(DE);Kloster Banz(DE)
作者
C.Q. Chen; R. Helbig; R. Winkler; A. Wysmolek; M. Potemski;
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正文语种 eng
中图分类无线电电子学、电信技术;
关键词
4H-SiC; D_1 bound exciton; zeeman effect;

机译：4H-SiC; D_1束缚激子；塞曼效应;

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专利

1. Zeeman spectroscopy of the D_1 bound exciton in 3C-, and 4H-SiC [J] . T. Egilsson, I. G. Ivanov, A. Henry, Physica, B. Condensed Matter . 1999,第0期

机译：3C-和4H-SiC中D_1结合激子的塞曼光谱
2. The quadratic Zeeman effect used for state-radius determination in neutral donors and donor bound excitons in Si:P [J] . Litvinenko K. L., Li Juerong, Stavrias N., Semiconductor science and technology . 2016,第4期

机译：Si：P中性施主和施主结合的激子用于状态半径确定的二次塞曼效应
3. Zeeman splitting and dynamics of an isoelectronic bound exciton near the band edge of ZnO [J] . S. L. Chen, W. M. Chen, I. A. Buyanova Physical review . 2012,第23期

机译：ZnO带边附近的等电子束缚激子的塞曼分裂和动力学
4. Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC Matrix [C] . J. Camassel, S. Juillaguet European Conference on Silicon Carbide and Related Materials . 2005

机译：在4H-SIC矩阵中绑定到3C-SIC堆叠故障的激子签名的强度比
5. Strongly-bound Excitons in Transition Metal Dichalcogenides and Organic Semiconductors [D] . Schulzetenberg, Aaron. 2020

机译：过渡金属二甲硅藻和有机半导体中强烈的激子
6. Exciton diamagnetic shifts and valley Zeeman effects in monolayer WS2 and MoS2 to 65 Tesla [O] . Andreas V. Stier, Kathleen M. McCreary, Berend T. Jonker, -1

机译：WS2和MoS2单层到65 Tesla的激子抗磁位移和谷塞曼效应
7. The quadratic Zeeman effect used for state-radius determination in neutral donors and donor bound excitons in Si:P [O] . K L Litvinenko, Juerong Li, N Stavrias, 2016

机译：用于SI：P中中性供体和供体约束激子的状态半径测定的二次塞曼效应
8. Zeeman Studies of Photoluminescence of Excited Terminal States of a Bound-Exciton-Donor Complex in GaAs. [R] . Reynolds, D. C., Litton, C. W., Collins, T. C., 1975

机译：Gaas中束缚 - 激子 - 给体复合物激发末端态光致发光的塞曼研究。

Zeeman Effect of D_1 Bound Exciton in 4H-SiC

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