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PZT thin films grown by laser ablation

机译:激光烧蚀生长的PZT薄膜

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Abstract: PZT thin films were deposited by laser ablation at high vacuum and at room temperature. After that, some of the samples were annealed at air in the temperature range 450$DGR@C - 550$DGR@C. The samples were characterized by XPS and X-ray diffraction. A decrease in the oxygen composition of the as-deposited sample was observed. In the as-deposited film metallic lead (Pb) appeared. The as-deposited analyzed film showed a weak crystallization. A posterior annealing of the as-grown films improved their crystalline structure. This annealing treatment provoked the disappearance of the metallic Pb bonds in the films.!7
机译:摘要:在高真空和室温下通过激光烧蚀沉积PZT薄膜。之后,将一些样品在空气中在450 $ DGR @ C-550 $ DGR @ C的温度范围内进行退火。通过XPS和X射线衍射对样品进行表征。观察到所沉积样品的氧组成降低。在沉积的膜中出现金属铅(Pb)。沉积的分析膜显示出弱结晶。生长薄膜的后退火改善了它们的晶体结构。这种退火处理导致了薄膜中金属Pb键的消失。7

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