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首页> 外文会议>42nd international symposium on microelectronics (IMAPS 2009) >An Investigation of Materials Selection and Manufacturing Process on Resulted Device Alpha Emissivity Levels
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An Investigation of Materials Selection and Manufacturing Process on Resulted Device Alpha Emissivity Levels

机译：器件α发射率水平对材料选择和制造过程的研究

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The continued decrease in Si feature sizes has resulted in significant increase in transistor and embeddedrnSRAM density. In the meantime, this decrease in feature size, along with the the reduction in operating voltages, hasrnalso resulted in a reduction in the charge stored for SRAMs and transistors. Both of these changes may result in anrnunintended increase of SER (Soft Error Rates) in IC devices. One of the major contributing factors for SER is alpharnparticles emitted from packaging materials, which mostly comes from the decay of Th and U. These elementsrntypically have a concentration of a few parts per billion in materials such as silica fillers and solder alloys. Even atrnthese levels, however, small amount of contamination on the assembly process due to mix-use of equipment orrntooling can result in high and unreliability alpha emissivity near the active silicon, resulting in an increase of SER.rnIn this work, we investigate the effects of key process steps and equipment use on the alpha emissivityrnlevels on flip chip packages. First, blank silicon wafers are processed through major steps of the assembly process.rnBoth a dedicated ULA (Ultra Low Alpha) assembly line and a mix-use line are evaluated. Contacts and handling byrnequipment and tooling are simulated on these wafers, and after every step, one wafer is taken out of the process forrnalpha emissivity measurement. Second, actual flip chip components with an ULA package material set arernassembled on the same dedicated ULA and mix-use assembly lines. Alpha emissivity levels near the active siliconrnsurface are measured for both groups of components. Alpha emissivity measurements on the blanks wafers and thernflip chip components will be reported and compared.
机译：Si特征尺寸的持续减小导致晶体管和嵌入式rnSRAM密度的显着增加。同时，特征尺寸的减小以及工作电压的减小也导致了SRAM和晶体管存储电荷的减少。这两个变化都可能导致IC设备中的SER（软错误率）意外增加。 SER的主要促成因素之一是包装材料中散发的α粒子，这些粒子主要来自Th和U的衰减。这些元素通常在十亿分之几的浓度的材料中，例如二氧化硅填料和焊料合金。但是，即使在这样的水平下，由于混合使用设备或工具而在组装过程中产生的少量污染也可能导致活性硅附近的α发射率高且不可靠，导致SER增大。在这项工作中，我们研究了影响倒装芯片封装的alpha发射率级别上的关键工艺步骤和设备使用情况。首先，空白的硅晶片要通过组装过程中的主要步骤进行处理.rn评估了专用的ULA（超低阿尔法）组装线和混合使用线。在这些晶片上模拟设备的接触和处理，在每一步骤之后，将一个晶片从过程中取出进行α发射率测量。其次，将具有ULA封装材料集的实际倒装芯片组件组装在同一条专用ULA和混合使用组装线上。对两组组件都测量了有源硅表面附近的α发射率。空白晶圆和倒装芯片组件的α发射率测量将报告并进行比较。

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