Impact of the pulse-amplifier slew-rate on the pulsed-IV measurement of GaN HEMTs

机译：脉冲放大器摆率对GaN HEMT的脉冲IV测量的影响

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

The influence of the non-ideal response of the pulse-amplifier on the trap and self-heating dynamics, and hence, on the drain-current transient in a GaN HEMT is studied with new trap and self-heating models. It is shown that the study of the trap and self-heating dynamics requires a proper correction technique that accounts for the change in trap-potential, trap time-constant and thermal response due to the non-ideal response of the pulse-amplifier. Several post-measurement data correction techniques are discussed and shown to be incapable of predicting the true drain-current transient. A pre-measurement terminal correction technique using a new version of the pulse measurement system is used to solve the problem.

机译：利用新的阱和自热模型研究了脉冲放大器的非理想响应对阱和自热动力学的影响，从而对GaN HEMT中的漏极电流瞬态产生了影响。结果表明，对阱和自热动力学的研究需要一种适当的校正技术，该技术应考虑由于脉冲放大器的非理想响应而引起的阱势，阱时间常数和热响应的变化。讨论了几种测量后数据校正技术，这些技术无法预测真正的漏电流瞬变。使用新版本的脉冲测量系统的预测量终端校正技术可解决该问题。

著录项

来源
《75th ARFTG Microwave Measurements Conference》|2010年|p.1-7|共7页
会议地点 Anaheim CA(US);Anaheim CA(US)
作者
Albahrani Sayed A.; Parker Anthony E.;
展开▼
作者单位

Dept. of Physics and Engineering, Macquarie University, Sydney NSW Australia 2109;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类微波与超高频技术;
关键词
HEMT; Pulse measurement; pulse amplifier slew rate; self-heating; trap;

机译：HEMT;脉冲测量;脉冲放大器压摆率;自热;陷阱;

相似文献

外文文献
中文文献
专利

1. Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer [J] . Microwave Theory and Techniques, IEEE Transactions on . 2010,第5期

机译：利用大信号网络分析仪对偏置的AlGaN / GaN HEMT进行脉冲IV脉冲RF冷FET寄生提取
2. Effective Suppression of IV Knee Walk-Out in AlGaN/GaN HEMTs for Pulsed-IV Pulsed-RF With a Large Signal Network Analyzer [J] . Doo S. J., Roblin P., Jessen G. H., IEEE microwave and wireless components letters . 2006,第期

机译：使用大型信号网络分析仪有效抑制用于脉冲IV脉冲RF的AlGaN / GaN HEMT中的IV膝走动
3. Study of Impact of Access Resistance on High-Frequency Performance of AlGaN/GaN HEMTs by Measurements at Low Temperatures [J] . Nidhi, Palacios T., Chakraborty A., IEEE Electron Device Letters . 2006,第期

机译：通过低温测量研究存取电阻对AlGaN / GaN HEMT高频性能的影响
4. Impact of the Pulse-amplifier Slew-rate on the Pulsed-IV measurement of GaN HEMTs [C] . Sayed A. Albahrani, Anthony E. Parker Automatic Radio Frequency Techniques Group Microwave Measurement Conference . 2010

机译：脉冲放大器摆率对GaN Hemts脉冲 - IV测量的影响
5. Analysis of failure mechanisms that impact safe operation of ALGaN/GaN HEMTs. [D] . Hodge, Michael David. 2014

机译：分析影响ALGaN / GaN HEMT安全运行的故障机理。
6. Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs [O] . Pedro J. Martínez, Enrique Maset, Pedro Martín-Holgado, 2019

机译：γ辐射对AlGaN / GaN功率HEMT中动态RDSON特性的影响
7. Effective suppression of IV knee walk-out in AlGaN/GaN HEMTs for pulsed-IV pulsed-RF with a large signal network analyzer [O] . Seok Joo Doo, Patrick Roblin, Gregg H. Jessen, 2006

机译：使用大型信号网络分析仪有效抑制alGaN / GaN HEmT中用于脉冲IV脉冲射频的IV拐点走出
8. Contactless Mobility, Carrier Density, and Sheet Resistance Measurements on Si, GaN, and AlGaN/GaN High Electron Mobility Transistor (HEMT) Wafers. [R] . Tompkins, R. P., Nguyen, D. 2015

机译：si，GaN和alGaN / GaN高电子迁移率晶体管（HEmT）晶片的非接触迁移率，载流子密度和薄层电阻测量。

Impact of the pulse-amplifier slew-rate on the pulsed-IV measurement of GaN HEMTs

摘要

著录项

相似文献

相关主题

期刊订阅