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LARGE AREA NANO IMPRINT LITHOGRAPHY ON 200 MM WAFERS

机译:在200毫米晶圆上进行大面积纳米印刷术

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The need for smaller feature sizes in the semiconductor industry has lead to significant improvements of the classical optical lithography in the past two decades but the limits are clearly seen at structures below 100nm. Furthermore, for producing those structures the capital investments required are extremely high and nearly unaffordable for medium-size or start up companies and their potential new applications. This situation was the motivation for research worldwide to develop alternative techniques for producing sub-micron patterns . Cost-effective mask production, optical gratings and micro-lenses or structuring of Polymers for the biomedical field are just some of the prominent examples of highly potential applications.rnAll such non-optical lithography techniques are termed Nano Imprint Lithography (NIL). With those techniques precise structures between 10nm to several 100nm can be quite easily produced. Figure 1 shows an overview and describes the three major process techniques i.e. Hot Embossing (HE), UV Imprinting (UV-NIL) and Micro Contact Printing (C P). Major differences of those techniques are the materials suitable to be imprinted, the kind of stamps, process temperature and contact force used during the imprinting. Hot Embossing uses high contact forces at higher temperatures in order to imprint into solid materials like glass, PMMA or PC. UV-NIL works at lower temperatures and employs only low contact forces and the materials are in most cases semi-fluid polymers.
机译:在过去的二十年中,半导体行业对更小的特征尺寸的需求已导致经典光学光刻技术的显着改进,但是在100nm以下的结构中可以清楚地看到这些限制。此外,对于生产这些结构,所需的资本投资非常高,对于中型或新兴公司及其潜在的新应用而言,这几乎是无法承受的。这种情况是全世界进行研究以开发产生亚微米图案的替代技术的动机。具有成本效益的掩模生产,光栅和微透镜或用于生物医学领域的聚合物结构只是极具潜力的应用中的一些突出实例。所有这些非光学光刻技术都被称为纳米压印光刻(NIL)。利用这些技术,可以很容易地制造出10nm到几百nm之间的精确结构。图1显示了概述,并描述了三种主要的处理技术,即热压印(HE),UV压印(UV-NIL)和微接触印刷(C P)。这些技术的主要区别在于适合压印的材料,压印的种类,压印过程中使用的工艺温度和接触力。热压印在较高温度下使用高接触力,以便压印到玻璃,PMMA或PC等固体材料中。 UV-NIL在较低的温度下工作,并且仅采用低接触力,并且在大多数情况下,该材料为半流体聚合物。

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