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High-performance InGaAs/InP-based single photon avalanche diode with reduced afterpulsing

机译：高性能基于InGaAs / InP的单光子雪崩二极管，减少了后脉冲

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We report reduced afterpulsing for a high-performance InGaAs/InP single photon avalanche photodiode (SPAD) using a gated-mode passive quenching with active reset (gated-PQAR) circuit. Photon detection efficiency (PDE) and dark count probability (DCP) were measured at a gate repetition rate of 1 MHz. With a double-pulse measurement technique, the afterpulsing probability was measured for various hold-off times. At 230K, 0.3% afterpulsing probability for a 10 ns hold-off time was achieved with 13% PDE, 2×10~(-6) DCP and 0.4 ns effective gate width. For the same hold off time, 30% PDE and 1×10~(-5) DCP was achieved with 6% afterpulsing probability for an effective gate width of 0.7 ns.

机译：我们报告了采用带主动复位（门控PQAR）电路的门控模式无源淬灭技术，可降低高性能InGaAs / InP单光子雪崩光电二极管（SPAD）的后脉冲。在1 MHz的门重复频率下测量了光子检测效率（PDE）和暗计数概率（DCP）。使用双脉冲测量技术，可以测量各种延迟时间的后脉冲概率。在230K下，采用10％的PDE，2×10〜（-6）DCP和0.4 ns的有效栅极宽度，在10 ns的保持时间内获得了0.3％的后脉冲概率。对于相同的释抑时间，有效栅极宽度为0.7 ns，实现了30％的PDE和1×10〜（-5）DCP，具有6％的后脉冲概率。

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来源
《Advanced photon counting techniques IV》|2010年|P.76810S.1-76810S.7|共7页
会议地点 Orlando FL(US)
作者
Chong Hu; Xiaoguang Zheng; Joe C. Campbell; Bora M. Onat; Xudong Jiang; Mark A. Itzler;
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作者单位

Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904;

rnElectrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904;

rnElectrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904;

rnPrinceton Lightwave Inc., 2555 US Route 130 South, Cranbury, NJ 08512;

rnPrinceton Lightwave Inc., 2555 US Route 130 South, Cranbury, NJ 08512;

rnPrinceton Lightwave Inc., 2555 US Route 130 South, Cranbury, NJ 08512;

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会议组织
原文格式 PDF
正文语种 eng
中图分类光电子技术、激光技术;
关键词
afterpulsing; dark count probability; passive quenching with active reset; photon detection efficiency; and single photon avalanche diodes;

机译：后脉冲暗计数概率；主动复位的被动淬火；光子检测效率；和单光子雪崩二极管;

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专利

1. Fast Active Quenching Circuit for Reducing Avalanche Charge and Afterpulsing in InGaAs/InP Single-Photon Avalanche Diode [J] . Acerbi F., Frera A.D., Tosi A., IEEE Journal of Quantum Electronics . 2013,第7期

机译：用于减少InGaAs / InP单光子雪崩二极管中雪崩电荷和后脉冲的快速有源淬火电路
2. InGaAs/InP Single-Photon Avalanche Diode With Reduced Afterpulsing and Sharp Timing Response With 30 ps Tail [J] . Tosi A., Acerbi F., Anti M., Quantum Electronics, IEEE Journal of . 2012,第9期

机译：InGaAs / InP单光子雪崩二极管具有降低的后脉冲和30 ps尾巴的快速时序响应
3. Afterpulsing studies of low-noise InGaAs/InP single-photon negative-feedback avalanche diodes (vol 62, pg 1151, 2015) [J] . Korzh Boris, Lunghi Tommaso, Kuzmenko Kateryna, Journal of Modern Optics . 2015,第19a20期

机译：低噪声InGaAs / InP单光子负反馈雪崩二极管的后脉冲研究（vol 62，pg 1151，2015）
4. High-performance InGaAs/InP-based single photon avalanche diode with reduced afterpulsing [C] . Chong Hu, Xiaoguang Zheng, Joe C. Campbell SPIE Defense, Security, and Sensing Symposium . 2010

机译：基于高性能的IngaAs / InP的单光子雪崩二极管，后脉冲减少
5. CMOS single-photon avalanche diodes and micromachined optical filters for integrated fluorescence sensing. [D] . Dandin, Marc Peralte. 2012

机译：CMOS单光子雪崩二极管和微机械滤光片，用于集成荧光传感。
6. Comparative study of afterpulsing behavior and models in single photon counting avalanche photo diode detectors [O] . Abdul Waris Ziarkash, Siddarth Koduru Joshi, Mario Stipčević, -1

机译：单光子计数雪崩光电二极管探测器的后脉冲行为和模型的比较研究
7. Afterpulsing studies of low-noise InGaAs/InP single-photon negative-feedback avalanche diodes [O] . Korzh, Boris, Lunghi, Tommaso, Kuzmenko, Kateryna, 2015

机译：低噪声InGaAs / InP单光子负反馈雪崩二极管的后脉冲研究

High-performance InGaAs/InP-based single photon avalanche diode with reduced afterpulsing

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