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Single photon avalanche diode and array of single photon avalanche diodes

机译:单光子雪崩二极管和单光子雪崩二极管阵列

摘要

A single photon avalanche diode, SPAD, comprises an active area which is arranged to generate a photon triggered avalanche current. A cover is arranged on or above the active area. The cover shields the active area from incident photons. The cover comprises a stack of at least the first and a second metal layer. At least one of the metal layers, e.g. the first metal layer, comprises an aperture. The metal layers are arranged in the stack with respect to an optical axis such as to open an effective aperture along the optical axis. By way of the effective aperture a portion of the active area is exposed to incident photons being incident along the optical axis. The effective aperture is smaller than the aperture arranged in the first metal layer.
机译:单个光子雪崩二极管Spad包括有源区域,该有源区域被布置成产生光子触发的雪崩电流。盖子布置在有源区或高于活动区域上。盖子屏蔽了入射光子的有源区。盖子包括至少第一和第二金属层的堆叠。金属层中的至少一个,例如金属层。第一金属层包括孔。金属层相对于光轴布置在堆叠中,使得沿着光轴打开有效孔。通过有效孔径,有源区域的一部分暴露于入射光子沿光轴入射。有效孔小于布置在第一金属层中的孔。

著录项

  • 公开/公告号US11081599B2

    专利类型

  • 公开/公告日2021-08-03

    原文格式PDF

  • 申请/专利权人 AMS AG;

    申请/专利号US201816636692

  • 发明设计人 GEORG ROEHRER;

    申请日2018-07-26

  • 分类号H01L31/107;H01L31/0216;H01L27/144;

  • 国家 US

  • 入库时间 2022-08-24 20:17:59

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