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首页> 外文会议>Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication >Real-time optical control of epitaxial III-V semiconductor composition and structure
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Real-time optical control of epitaxial III-V semiconductor composition and structure

机译：外延III-V族半导体组成和结构的实时光学控制

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Abstract: Real-time control of epitaxial crystal growth is a necessity for the production of advanced materials in order to improve the yields of new generations of digital, RF, and optoelectronic devices. Process tolerances are becoming tighter in terms of both layer stoichiometry and layer thickness. The traditional grow-characterize-grow again technique that has served us well over past decades is no longer a production worthy method of ensuring that wafers grown after calibration meet the design specifications. The day to day drift in most epitaxial growth systems is often as great as the wafer specification window. In this paper we describe a spectroscopic ellipsometer based control system and present results obtained for GaAs-AlGaAs structures grown by organometallic molecular beam epitaxy. !10
机译：摘要：为了提高新一代数字，RF和光电器件的产量，实时控制外延晶体生长是生产高级材料的必要条件。就层化学计量和层厚度而言，工艺公差变得越来越严格。在过去的几十年中一直为我们提供服务的传统的“生长-特征-生长-再生长”技术已不再是一种确保在校准后生长的晶圆满足设计规格的生产方法。大多数外延生长系统中的日常漂移通常与晶圆规格窗口一样大。在本文中，我们描述了一种基于光谱椭偏仪的控制系统，并介绍了通过有机金属分子束外延生长的GaAs-AlGaAs结构获得的结果。 ！10

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