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首页> 外文会议>Advances in Display Technologies III >A CMOS microdisplay with integrated controller utilizing improved silicon hot carrier luminescent light sources
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A CMOS microdisplay with integrated controller utilizing improved silicon hot carrier luminescent light sources

机译：具有集成控制器的CMOS微显示器，利用改进的硅热载流子发光光源

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Microdisplay technology, the miniaturization and integration of small displays for various applications, is predominantly based on OLED and LCoS technologies. Silicon light emission from hot carrier electroluminescence has been shown to emit light visibly perceptible without the aid of any additional intensification, although the electrical to optical conversion efficiency is not as high as the technologies mentioned above. For some applications, this drawback may be traded off against the major cost advantage and superior integration opportunities offered by CMOS microdisplays using integrated silicon light sources. This work introduces an improved version of our previously published microdisplay by making use of new efficiency enhanced CMOS light emitting structures and an increased display resolution. Silicon hot carrier luminescence is often created when reverse biased pn-junctions enter the breakdown regime where impact ionization results in carrier transport across the junction. Avalanche breakdown is typically unwanted in modern CMOS processes. Design rules and process design are generally tailored to prevent breakdown, while the voltages associated with breakdown are too high to directly interact with the rest of the CMOS standard library. This work shows that it is possible to lower the operating voltage of CMOS light sources without compromising the optical output power. This results in more efficient light sources with improved interaction with other standard library components. This work proves that it is possible to create a reasonably high resolution microdisplay while integrating the active matrix controller and drivers on the same integrated circuit die without additional modifications, in a standard CMOS process.
机译：微显示技术主要是基于OLED和LCoS技术，是用于各种应用的小型显示器的小型化和集成。尽管电到光的转换效率不如上述技术那么高，但已显示出从热载流子电致发光中发出的硅光可以发出可见光，而无需任何额外的增强。对于某些应用，可以通过使用集成硅光源的CMOS微显示器提供的主要成本优势和优越的集成机会来权衡此缺点。这项工作通过使用新的效率增强型CMOS发光结构和提高的显示分辨率，引入了我们先前发布的微型显示器的改进版本。当反向偏置的pn结进入击穿状态时，通常会产生硅热载流子发光，其中碰撞电离会导致载流子跨结传输。在现代CMOS工艺中，雪崩击穿通常是不希望的。通常会量身定制设计规则和工艺设计，以防止击穿，而与击穿相关的电压过高，无法直接与CMOS标准库的其余部分进行交互。这项工作表明，可以在不影响光输出功率的情况下降低CMOS光源的工作电压。这将产生更有效的光源，并改善与其他标准库组件的交互。这项工作证明，在标准的CMOS工艺中，在不进行额外修改的情况下将有源矩阵控制器和驱动器集成在同一集成电路芯片上的同时，可以创建合理的高分辨率微显示器。

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