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首页> 外文会议>Advances in X-ray analysis (ICDD2001) >STRUCTURAL AND OPTICAL PROPERTIES OF IRIDIUM FILMS ANNEALED IN AIR
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STRUCTURAL AND OPTICAL PROPERTIES OF IRIDIUM FILMS ANNEALED IN AIR

机译：空气中退火的铱薄膜的结构和光学性质

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摘要

The present paper describes the changes in the structural and optical properties of the sputter deposited iridium films annealed in air and slow cooled from 673K-1073K. Glancing Angle X-ray Diffraction (GAXRD) and X-ray Reflectivity (XRR) measurements were used for the structural investigations of the films. GAXRD and X-ray reflectivity measurements showed growth of ～4nm IrO_2 over-layer by annealing at 873K. Increased annealing temperatures lead to the formation of oxidation of the iridium under-layer, with the film comprising iridium-oxide (major) and iridium (minor) phases. Increased surface roughness associated with the films annealed at 873K and 1073K was attributed to the growth of a crystalline IrO_2 layer. Variable Angle Spectroscopic Ellipsometric (VASE) measurements in the wavelength range 300-1200nm, are presented for the as deposited iridium films and film annealed in air at 1073K. Estimated thickness of as-deposited iridium metal film was consistent with XRR results. The ellipsometry data for the annealed film was modeled using Lorentz oscillator layer. The results indicated the presence of conducting layer of Iridium oxide.
机译：本文描述了在空气中退火并从673K-1073K缓慢冷却的溅射沉积铱膜的结构和光学性质的变化。掠射角X射线衍射（GAXRD）和X射线反射率（XRR）测量用于薄膜的结构研究。 GAXRD和X射线反射率测量表明，在873K退火后，IrO_2覆盖层的生长达到了约4nm。升高的退火温度导致铱下层的氧化，其中膜包含氧化铱（主）相和铱（次）相。与在873K和1073K退火的薄膜相关的表面粗糙度的增加归因于结晶IrO_2层的生长。提出了在300-1200nm波长范围内对沉积的铱膜和在1073K的空气中退火的膜进行的可变角度光谱椭偏（VASE）测量。沉积的铱金属膜的估计厚度与XRR结果一致。使用洛伦兹振子层对退火薄膜的椭偏数据进行建模。结果表明存在氧化铱导电层。

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  • 来源
  • 会议地点 Steamboat Springs CO(US);Steamboat Springs CO(US);Steamboat Springs CO(US)
  • 作者

    Sandeep Kohli; David Niles; Christopher D.Rithncr; Peter K.Dorhout;

  • 作者单位

    Department of Chemistry, Colorado State University, Fort Collins CO 80523 Agilent Technologies, Fort Collins CO 80525;

    rnDepartment of Chemistry, Colorado State University, Fort Collins CO 80523 Agilent Technologies, Fort Collins CO 80525;

    rnDepartment of Chemistry, Colorado State University, Fort Collins CO 80523 Agilent Technologies, Fort Collins CO 80525;

    rnDepartment of Chemistry, Colorado State University, Fort Collins CO 80523 Agilent Technologies, Fort Collins CO 80525;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 X射线、紫外线、红外线;
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