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RF-MEMS VARACTOR WITH MINIMAL CONTACT

机译:最小接触的RF-MEMS压敏电阻

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摘要

An innovative RF-MEMS varactor has been developed for use in distributed RF-MEMS circuits such as phase shifters and tunable matching networks where the capacitance ratio between on- and off- state must be limited to 2-10. By fabricating standoffs on the bottom side of the beam, this device eliminates the intimate contact between the RF-MEMS and dielectric, that is found in typical RF-MEMS beam capacitive switches. These standoffs limit the range of motion, allowing the capacitance ratio to be set, and also greatly reduces the contact area thus preventing stiction from occurring. The RF-MEMS switch has been fabricated with initial measurements demonstrating a capacitance ratio of 2.5. Preliminary reliability testing results demonstrate that this RF-MEMS design is very robust.
机译:已经开发出一种创新的RF-MEMS变容二极管,可用于分布式RF-MEMS电路,例如移相器和可调匹配网络,其中导通和截止状态之间的电容比必须限制为2-10。通过在电子束的底面上制造支架,该器件消除了RF-MEMS与电介质之间的紧密接触,这种紧密接触在典型的RF-MEMS电子束电容式开关中就可以找到。这些支座限制了运动范围,允许设置电容比,并且还大大减小了接触面积,从而防止了粘连的发生。 RF-MEMS开关的初始测量表明电容比为2.5。初步的可靠性测试结果表明,这种RF-MEMS设计非常坚固。

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