ANALYSIS OF TEMPERATURE DISTRIBUTION ON A MASK MADE OF SILICON WAFER FOR ELECTRON BEAM PROJECTION SYSTEM

机译：电子束投影系统硅片掩膜的温度分布分析

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(1) Temperature distribution on a silicon mask that is irradiated by electron beam is analyzed considering heat conduction and radiation. Analytical model is assumed as circular symmetry. (2) The solution that satisfies irradiation power of 2.5 W, electron beam radius of 1 mm and temperature of irradiation area of 1685 K is obtained from that the total emissivity must be 0.2. (3) When thickness of the thin film is larger than 0.07 mm, the temperature at the irradiated area does not over 600 K.

机译：（1）考虑热传导和辐射，分析由电子束照射的硅掩模上的温度分布。分析模型被假定为圆形对称。（2）根据总发射率必须为0.2，获得满足2.5W的辐照功率，1mm的电子束半径和1685K的辐照面积温度的溶液。（3）当薄膜的厚度大于0.07 mm时，照射区域的温度不超过600K。

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来源
《American Society for Precision Engineering Annual Meeting; 20051009-14; Norfolk,VA(US)》|2005年|P.162-165|共4页
会议地点 NorfolkVA(US)
作者
Shigeo KATO; Hisashi NAKAMURA; Norihiko KATO; Manabu ONO; Norio SAITOU;
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作者单位

Nippon Institute of Technology, Miyashiro, Saitama 345-8501, JAPAN;

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原文格式 PDF
正文语种 eng
中图分类机械加工精度理论;
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ANALYSIS OF TEMPERATURE DISTRIBUTION ON A MASK MADE OF SILICON WAFER FOR ELECTRON BEAM PROJECTION SYSTEM

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