• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Annual Semiconductor Pure Water and Chemicals Conference(SPWCC): UPW Track; 20050215-16; Santa Clara,CA(US) >Yield Enhancement of Bonded Silicon Wafers by Point-Of-Use Micro-Filtration and Purification Of DI Water During Chemical Cleaning
【24h】

Yield Enhancement of Bonded Silicon Wafers by Point-Of-Use Micro-Filtration and Purification Of DI Water During Chemical Cleaning

机译：在化学清洗过程中通过使用点微滤和去离子水的纯化提高键合硅晶片的产量

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Direct wafer bonding (DWB) is a 3-step sequence consisting of surface preparation, contacting and thermal annealing. The contacting is an operation of ultra-fine alignment and face-to-face joining of two silicon wafers. Prior to joining, each silicon wafer is chemically cleaned in order to minimize surface contamination. The control of surface contamination is a key parameter in enhancing the product yield. The sub-micron particle density can be greatly reduced by (a) Point-of-use (POU) micro-filtration and purification of deionized (DI) water and (b) Application of ultra-dilute concentration of ultra-pure chemicals containing extremely low levels of liquid particle counts. Prior to joining operation, a laser beam Surfscan is employed to directly measure haze and light point defects (LPD's) on the surfaces of silicon wafers. The sub-micron LPD's counts must be minimal in order to reduce density of voided or "disbonded" regions. A 1-micron size particle, for instance, can cause a void as large as 1-centimeter in diameter during the bonding operation. A scanning acoustic microscope is used to quantatively detect the presence of micro-voids, delamination and other defects with an interface layer of a bonded wafer. Detailed product throughput and yield data in terms of voided density are presented in this technical paper. The role of ultra-pure DI water as well as ultra-dilute concentration of ultra-pure chemicals is discussed in order to produce clean silicon wafer surfaces. The final wafer rinse is performed using ultra-pure DI water, which is first filtered with the high efficiency membrane filter that removes particles down to 0.02-μm size and is then purified to remove metal ions to sub-ppb levels. Detailed voided data are compared with and without POU micro-filtration of DI water. This paper will describe the role of pure water and cleaning chemicals, wet cleaning processes, and contamination control using advanced filtration/purification methods in producing clean wafer surfaces. Test results showing the effectiveness of POU purification will be presented along with the wafer level data that correlate high yields to cleaner wafer environment.
机译：直接晶圆键合（DWB）是一个三步骤的序列，包括表面准备，接触和热退火。接触是两个硅晶片的超精细对准和面对面接合的操作。在接合之前，对每个硅晶片进行化学清洗，以最大程度地减少表面污染。表面污染的控制是提高产品产量的关键参数。通过（a）使用点（POU）微过滤和去离子水（DI）的纯化以及（b）超稀释浓度的超纯化学品的使用，可大大降低亚微米颗粒密度。低水平的液体颗粒计数。在接合操作之前，使用激光束Surfscan直接测量硅晶片表面上的雾度和光点缺陷（LPD）。亚微米LPD的计数必须最小，以减少空隙或“脱粘”区域的密度。例如，1微米大小的颗粒可能会在粘结操作过程中导致直径最大为1厘米的空隙。扫描声显微镜用于定量检测键合晶片的界面层是否存在微孔，分层和其他缺陷。本技术论文介绍了有关空隙密度的详细产品产量和产量数据。为了生产清洁的硅晶片表面，讨论了超纯去离子水的作用以及超稀释浓度的超纯化学药品。最终的晶圆冲洗使用超纯去离子水进行，首先用高效膜过滤器过滤，以除去小至0.02μm的颗粒，然后进行纯化，以去除金属离子至ppb以下。在使用和不使用去离子水进行POU微滤的情况下，将比较详细的无效数据。本文将描述纯净水和清洁化学品，湿法清洁工艺以及使用先进的过滤/纯化方法控制污染在生产干净晶片表面中的作用。将显示表明POU净化效果的测试结果，以及将高产量与更清洁的晶圆环境相关的晶圆级数据。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号