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Synthesis of Boron Carbonitride Films by Plasma-based Ion Implantation

机译:等离子体基离子注入合成碳氮化硼薄膜

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BCN films were prepared with unbalanced magnetron sputtering boron carbide film followed by nitrogen plasma-based ion implantation at different voltages on Si substrate. The implantation voltages vary from 10 kV to 50 kV. The chemical states of B, C and N of the films were studied with X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). The nano-hardness and elastic modulus of films were measured by Nano-Indenter. The results showed that amorphous BCN films formed in the nitrogen implanted layer. The amorphous peak becomes obvious with increasing of the implanted voltage when the voltage is under of 40 kV. The Nano-Indenter measurement showed that the B-C bond content and the disorder degree affect the hardness and modulus.
机译:先用不平衡磁控溅射碳化硼膜制备BCN膜,然后在硅衬底上以不同电压进行基于氮等离子体的离子注入。注入电压从10 kV到50 kV不等。用X射线光电子能谱(XPS)和傅里叶变换红外光谱(FTIR)研究了薄膜中B,C和N的化学态。薄膜的纳米硬度和弹性模量通过Nano-Indenter测量。结果表明,在氮注入层中形成了非晶态的BCN膜。当电压低于40 kV时,非晶态峰随注入电压的增加而变得明显。纳米压头测量表明,B-C键含量和无序度会影响硬度和模量。

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