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Effect of different laser irradiation on the dysentery bacilli

机译:不同激光照射对痢疾杆菌的影响

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摘要

Abstract: The S. flexnesi, which have high drug-resistance especially in Cm, Sm, Tc, SD, were irradiated by Ar$+$PLU$/ laser at 488 nm and semiconductor laser at 808 nm. The experiment results have shown that both Ar$+$PLU$/ laser and semiconductor laser with power density of 1.7 w/cm$+2$/ and irradiation dose of 2000 J/cm$+2$/ can conduce to the bacterial lethality and increase the mutation rates of the bacterial drug-sensitivity, and 'Colony Count' method have the superiority over the 'Inhibacteria Ring' method. At the mean time it further indicate that the high power semiconductor laser would play an important role in the sciences of laser biological medicine. But the effect of the near infrared semiconductor laser is far lower than that of Ar$+$PLU$/ laser of shorter wavelength at the same irradiation dose. It is clear that the output and irradiation dose of near infrared semiconductor laser shall be increased in order to get the same rates of the bacterial lethality and the drug-sensitivity mutation as Ar$+$PLU$/ laser's. !3
机译:摘要:用488 nm的Ar $ + $ PLU $ /激光和808 nm的半导体激光辐照具有较高耐药性的弗氏链球菌,特别是在Cm,Sm,Tc,SD上。实验结果表明,功率密度为1.7 w / cm $ + 2 $ /的Ar $ + PLU $ /半导体激光器和半导体激光器,照射剂量为2000 J / cm $ + 2 $ /都可以提高细菌的致死性。并提高了细菌药物敏感性的突变率,“菌落计数”方法优于“环吸菌法”。同时,它进一步表明,高功率半导体激光器将在激光生物医学领域发挥重要作用。但是,在相同的照射剂量下,近红外半导体激光器的效果远低于短波长的Ar $ + PLU $ /激光器。显然,应增加近红外半导体激光器的输出和辐照剂量,以便获得与Ar $ + $ PLU $ /激光器相同的细菌致死率和药物敏感性突变率。 !3

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