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首页> 外文会议>Ceramic materials for energy applications II >STUDY OF THE SILICON CARBIDE MATRIX ELABORATION BY FILM BOILING PROCESS
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STUDY OF THE SILICON CARBIDE MATRIX ELABORATION BY FILM BOILING PROCESS

机译：薄膜沸腾过程碳化硅基体的研究

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摘要

Film-boiling technique is a Ceramic Matrix Composites fabrication process, especially studied for the densification of carbon based composites. The densification starts from the porous preform, heated at high temperature in a liquid precursor which becomes gaseous in contact with hot surfaces. The cracking of the vapours results in a solid deposit constituting the matrix of the final composite. The main advantage of the film-boiling technique is its high densification rate: up to several hundreds of μm/h depending on the experimental set up (versus ～2μm/h in CVI). To get a better insight on this process, laboratory scale equipment with an internal resistive heating was developed. In this work, carbon preforms are densified by silicon carbide (SiC) matrices. Two SiC precursors are used: the methyltrichlorosilane (MTS) and the CVD4000. The samples characterizations show that the quality of the matrix (density, homogeneity, crystalline phase…) and the densification rate depend on several experimental settings (type of precursor, densification temperature…).
机译：薄膜沸腾技术是一种陶瓷基复合材料的制造工艺，专门研究了碳基复合材料的致密化。致密化从多孔预成型坯开始，在高温下在液态前体中加热，该前体在与热表面接触时呈气态。蒸气的裂化导致形成最终复合物基质的固体沉积物。薄膜沸腾技术的主要优点是其高致密化率：取决于实验设置，高达数百μm/ h（CVI中约为2μm/ h）。为了更好地了解此过程，开发了带有内部电阻加热的实验室规模的设备。在这项工作中，碳预成型坯被碳化硅（SiC）基质致密化。使用了两种SiC前驱物：甲基三氯硅烷（MTS）和CVD4000。样品表征表明，基质的质量（密度，均质性，结晶相……）和致密化速率取决于多种实验设置（前驱体类型，致密化温度……）。

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  • 会议地点 Daytona Beach FL(US);Daytona Beach FL(US);Daytona Beach FL(US);Daytona Beach FL(US);Daytona Beach FL(US);Daytona Beach FL(US)
  • 作者

    Aurelie Serre; Joelle Blein; Yannick Pierre; Patrick David; Fabienne Audubert; Sylvie Bonnamy; Eric Bruneton;

  • 作者单位

    CEA, DAM, Le Ripault, 37260 Monts, France;

    CEA, DAM, Le Ripault, 37260 Monts, France;

    CEA, DAM, Le Ripault, 37260 Monts, France;

    CEA, DAM, Le Ripault, 37260 Monts, France;

    CEA, DEN, Cadarache, 13108 Saint-Paul-Lez-Durance, France;

    CRMD, CNRS, Universite d'Orleans, 45071 Orleans, France;

    CEA, DAM, Le Ripault, 37260 Monts, France;

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