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High speed polishing of silicon dioxide thin films using linear planarization technology

机译：使用线性平面化技术高速抛光二氧化硅薄膜

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It has been reported in literature that the polish rate for glass follows the Preston equation, removal rate RR=K_pPV, where K_p is the Preston Coefficient, P is the polish pressure and V is the velocity of the wafer surface relative to the polishing surface. Linear Planarization Technology (LPT) offers the advantage of polishing at very high linear velocities. Polishing experiments using LPT over a wide range of polishing speeds (100 - 1000 fpm) and polishing pressures (3 - 7 psi) were conducted to determine if the silicon dioxide removal rate follows the Preston Equation. Results indicate that the removal rate is non-Prestonian for the process conditions specified. Further investigations revealed that for a given set of parameters, there is transition velocity at which the mechanism of wafer support undergoes a fundamental change.
机译：据文献报道，玻璃的抛光速率遵循普雷斯顿方程，去除速率RR ＝ K_pPV，其中K_p是普雷斯顿系数，P是抛光压力，V是晶片表面相对于抛光表面的速度。线性平面化技术（LPT）具有以很高的线性速度进行抛光的优势。使用LPT在宽范围的抛光速度（100-1000 fpm）和抛光压力（3-7 psi）下进行抛光实验，以确定二氧化硅的去除率是否符合普雷斯顿方程。结果表明，对于指定的工艺条件，去除率不是非Prestonian率。进一步的研究表明，对于给定的一组参数，晶片支撑机构发生根本变化的过渡速度。

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