It is demonstrated that ther is a difference in the pressure dependence origin of CMP removal rate between a hard and soft pad. It is shown that, in contrast to Preston's equation, the pressure dependence of the removal rate for CMP with soft pads is nonlinear, i.e., RR X P~(2/3). This new model is shown to be consistent with available experimental evidence on CMP of oxide dielectrics. In addition, it is pointed out that the pressure dependence behavior of the CMP removal rate for values of P near zero is needed for a further test of the present and other polishing rate models, for elucidating the direct chemical contribution to the removal rate and thus for a better understanding of CMP mechanisms.
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机译：事实证明，这是硬垫和软垫之间的CMP去除速率的压力依赖性成因的差异。结果表明，与普雷斯顿方程相反，具有软垫的CMP的去除速率的压力依赖性是非线性的，即RR X P〜（2/3）。该新模型显示出与氧化物电介质CMP的现有实验证据一致。另外，要指出的是，对于本值和其他抛光速率模型的进一步测试，需要对P值接近零的CMP去除速率的压力依赖性行为，以便阐明对去除速率的直接化学贡献，从而阐明以便更好地了解CMP机制。
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