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首页> 外文会议>Compound semiconductors: thin-film photovoltaics, LEDs, and smart energy controls >A low temperature, single step, pulsed d.c magnetron sputtering technique for copper indium gallium diselenide photovoltaic absorber layers
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A low temperature, single step, pulsed d.c magnetron sputtering technique for copper indium gallium diselenide photovoltaic absorber layers

机译：铜铟镓二硒化物光伏吸收层的低温单步脉冲直流磁控溅射技术

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摘要

Pulsed d.c Magnetron Sputtering (PdcMS) has been investigated for the first time to study the deposition of copper indium gallium diselenide (CIGS) thin films for photovoltaic applications. Pulsing the d.c. in the mid frequency region enhances the ion intensity and enables long term arc-free operation for the deposition of high resistivity materials such as CIGS. It has the potential to produce films with good cry stall inity, even at low substrate temperatures. However, the technique has not generally been applied to the absorber layers for photovoltaic applications. The growth of stoichiometric p-type CIGS with the desired electro-optical properties has always been a challenge, particularly over large areas, and has involved multiple steps often including a dangerous selenization process to compensate for selenium vacancies. The films deposited by PdcMS had a nearly ideal composition (Cu_(0.75)In_(0.88)Ga_(0.12)Se_2) as deposited at substrate temperatures ranging from no intentional heating to 400 ℃. The films were found to be very dense and pin-hole free. The stoichiometry was independent of heating during the deposition, but the grain size increased with substrate temperature, reaching about ～ 150 nm at 400 ℃. Hot probe analysis showed that the layers were p-type. The physical, structural and optical properties of these films were analyzed using SEM, EDX, XRD, and UV-VIS-NIR spectroscopy. The material characteristics suggest that these films can be used for solar cell applications. This novel ion enhanced single step low temperature deposition technique may have a critical role in flexible and tandem solar cell applications compared to other conventional techniques which require higher temperatures.
机译：脉冲直流磁控溅射（PdcMS）已被首次研究，以研究用于光伏应用的铜铟镓硒化（CIGS）薄膜的沉积。脉动直流电在中频区域中的离子注入增强了离子强度，并能够长期无电弧运行，以沉积高电阻率的材料，例如CIGS。即使在较低的基材温度下，它也有可能生产出具有良好的失速稳定性的薄膜。但是，该技术通常没有应用于光伏应用的吸收层。具有期望的电光性质的化学计量p型CIGS的生长一直是挑战，特别是在大面积上，并且涉及多个步骤，通常包括危险的硒化工艺以补偿硒空位。通过PdcMS沉积的薄膜在无意加热到400℃的衬底温度下具有接近理想的成分（Cu_（0.75）In_（0.88）Ga_（0.12）Se_2）。发现这些膜非常致密且无针孔。化学计量与沉积过程中的加热无关，但晶粒尺寸随基底温度的增加而增加，在400℃时达到约150 nm。热探针分析表明这些层是p型的。使用SEM，EDX，XRD和UV-VIS-NIR光谱分析了这些薄膜的物理，结构和光学性质。材料特性表明，这些膜可用于太阳能电池应用。与需要更高温度的其他常规技术相比，这种新颖的离子增强的单步低温沉积技术在柔性和串联式太阳能电池应用中可能发挥关键作用。

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