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Semiconducting Boron-Rich Neutron Detectors

机译:半导体富硼中子探测器

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摘要

Semiconducting boron-rich boron-carbon alloys have been deposited by plasma-enhanced chemical vapor deposition. Heterojunction diodes made with 276nm thick nanocrystalline layers of these alloys have been used as real-time solid-state neutron detectors. Individual neutrons were detected and signals induced by gamma rays were determined to be insignificant. Linearity of detection was demonstrated over more than two orders of magnitude in flux. The neutron detection performance was unaffected by > 1 x 10~(15) neutrons / cm~2. The source gas closo-1,2-dicarbadodecaborane (ortho-carborane) was used to fabricate the boron carbon alloys with only the natural isotopic abundance of ~(10)B. Devices made of thicker boron carbon alloy layers enriched in ~(10)B could lead to increased detection efficiency.
机译:通过等离子体增强化学气相沉积法沉积了富含半导体的硼碳-硼合金。由这些合金的276nm厚纳米晶层制成的异质结二极管已被用作实时固态中子探测器。检测到单个中子,并确定由伽马射线诱导的信号无关紧要。在超过两个数量级的通量中证明了检测的线性度。中子探测性能不受> 1 x 10〜(15)中子/ cm〜2的影响。使用原料气Closo-1,2-dicarbadodecaborane(原-碳硼烷)来制造仅具有约(10)B天然同位素丰度的硼碳合金。由富含〜(10)B的较厚的硼碳合金层制成的设备可能会提高检测效率。

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