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首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Image Reversal Trilayer Process Using Standard Positive Photoresist
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Image Reversal Trilayer Process Using Standard Positive Photoresist

机译：使用标准正性光刻胶的图像反转三层工艺

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Conventional trilayer schemes alleviate the decreasing photoresist budgets as well as satisfy the antireflection issues associated with high NA imaging. However, a number of challenges still exist with standard trilayer processing, most notable among which is the lack of broad resist compatibility and trade-offs associated with improving Si content, such as stability and lithography performance. One way to circumvent these issues is to use a silicon hard mask coated over a photoresist image of reverse tone to the desired pattern. Feasibility of this image reversal trilayer process was demonstrated by patterning of trenches and contact holes in a carbon hard mask from line and pillar photoresist images, respectively. This paper describes the lithography, pattern transfer process and materials developed for the image reversal trilayer processing.
机译：常规的三层方案减轻了光致抗蚀剂预算的减少，并满足了与高NA成像相关的抗反射问题。然而，标准三层工艺仍然存在许多挑战，其中最值得注意的是缺乏广泛的抗蚀剂相容性以及与提高Si含量相关的权衡，例如稳定性和光刻性能。解决这些问题的一种方法是使用硅硬掩模，该硅硬掩模涂覆在反色调至所需图案的光致抗蚀剂图像上。通过分别从线和柱光致抗蚀剂图像上对碳硬掩模中的沟槽和接触孔进行构图，证明了该图像反转三层工艺的可行性。本文介绍了用于图像反转三层处理的光刻，图案转印工艺和开发的材料。

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