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首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Correlation of EUV resist performance metrics in micro-exposure and full-field EUV projection tools
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Correlation of EUV resist performance metrics in micro-exposure and full-field EUV projection tools

机译：微曝光和全场EUV投影工具中EUV抗蚀剂性能指标的相关性

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摘要

We describe progress in implementation of blur-based resolution metrics for EUV photoresists. Three sets of blur metrics were evaluated as exposure-tool independent comparison methods using the Sematech-LBNL EUV micro-exposure tool (MET) and ASML α-Demo Tool (ADT) full-field EUV scanner. For the two EUV resists studied here, deprotection blurs of 15 nm are consistently measured using blur estimation methods based on corner rounding, contact hole exposure latitude, and process window fitting using chemical amplification lumped parameter models. Agreement between methods and exposure tools appears excellent. For both resists, SRAM-type lithographic diagnostic patterns at 80 nm pitch are only modestly sensitive to OPC blur compensation and display robust printability (RELS ～ ILS near 50 μm~(-1) for multiple trench geometries) on the ASML ADT. These findings confirm the continuing utility of blur-based metrics in a) guiding resist selection for use in EUV process development and integration at the 22 nm logic node and below, and b) providing an exposure-tool independent set of metrics for assessing progress in EUV resist development.
机译：我们描述了EUV光刻胶基于模糊的分辨率指标的实施进展。使用Sematech-LBNL EUV微曝光工具（MET）和ASMLα-DemoTool（ADT）全场EUV扫描仪，评估了三组模糊​​度量作为独立于曝光工具的比较方法。对于此处研究的两种EUV抗蚀剂，使用基于角倒圆，接触孔暴露纬度和使用化学放大集总参数模型的工艺窗口拟合的模糊估计方法，始终测量到15 nm的脱保护模糊。方法和曝光工具之间的一致性似乎很好。对于这两种抗蚀剂，在ASML ADT上，间距为80 nm的SRAM型光刻诊断图案仅对OPC模糊补偿适度敏感，并且显示出鲁棒的可印刷性（对于多个沟槽几何形状，RELS〜ILS接近50μm〜（-1））。这些发现证实了基于模糊的度量标准在a）指导抗蚀剂选择以用于22 nm逻辑节点及以下的EUV工艺开发和集成中，以及b）提供独立于曝光工具的一组度量标准来评估工艺进展的持续实用性。 EUV抵制发展。

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