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首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Statistical simulation of resist at EUV and Arf
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Statistical simulation of resist at EUV and Arf

机译：EUV和Arf处抗蚀剂的统计模拟

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摘要

Requirements of resist modeling strategies for EUV and low-k1 ArF nanolithography continue to become more stringent. Resist designers are consistently faced with the task of reducing exposure dose and line roughness while simultaneously improving exposure latitude, depth-of-focus and ultimate resolution. In this work, we briefly discuss a next-generation resist model for the prediction of statistical resist responses such as line-edge roughness, line-width roughness and CD variability, as well as base lithographic responses such as exposure latitude. The model's parameterized fit to experimental data from a state-of-the art polymer-bound PAG resist irradiated at ArF and EUV will be shown. The probabilistic computation of acid generation at ArF and EUV will be discussed. The factors influencing the hypothesized primary cause of resist roughness, acid shot noise, are discussed.
机译：EUV和低k1 ArF纳米光刻的抗蚀剂建模策略的要求越来越严格。抗蚀剂设计人员始终面临着减少曝光剂量和线条粗糙度，同时提高曝光范围，聚焦深度和最终分辨率的任务。在这项工作中，我们简要讨论了用于预测统计抗蚀剂响应（例如线边缘粗糙度，线宽粗糙度和CD变异性）以及基础光刻响应（例如曝光范围）的下一代抗蚀剂模型。将显示该模型对实验数据的参数化拟合，该数据来自在ArF和EUV下辐照的最新聚合物结合的PAG抗蚀剂。将讨论ArF和EUV处产酸的概率计算。讨论了影响假设的抗蚀剂粗糙度主要原因，酸散粒噪声的因素。

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