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首页> 外文会议>Conference on advances in resist materials and processing technology XXVI; 20090223-25; San Jose, CA(US) >Stochastic Modeling in Lithography: The Use of Dynamical Scaling in Photoresist Development
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Stochastic Modeling in Lithography: The Use of Dynamical Scaling in Photoresist Development

机译：光刻中的随机建模：在光刻胶开发中使用动态缩放

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摘要

The concepts of dynamical scaling in the study of kinetic roughness are applied to the problem of photoresist development. Uniform, open-frame exposure and development of photoresist corresponds to the problem of quenched noise and the etching of random disordered media and is expected to fall in the Kadar-Parisi-Zhang (KPZ) universality class. To verify this expectation, simulations of photoresist development in 1+1 dimensions were carried out with random, uncorrelated noise added to an otherwise uniform development rate. The resulting roughness exponent a and the growth exponent β were found to match the 1+1 KPZ values exactly.
机译：在动力学粗糙度研究中，动态缩放的概念被应用于光刻胶显影的问题。光致抗蚀剂的均匀，开框曝光和显影对应于猝灭噪声和随机无序介质蚀刻的问题，并且有望落入Kadar-Parisi-Zhang（KPZ）通用性类别。为了验证这一期望，在随机，不相关的噪声增加了否则均匀的显影速率的情况下，进行了1 + 1尺寸的光刻胶显影模拟。发现所得的粗糙度指数a和生长指数β精确匹配1 + 1 KPZ值。

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