Process Development of 50A IMP Ti Film with <2

机译：<2的50A IMP Ti膜的工艺开发

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We have developed a 50 A IMP Ti film for 300mm liner application. The process development was done on 300 mm iLB Endura Platform, which combines the high bottom converage andscalability of IMP Ti with the conformility of the CVD TXZ TiN process to address low contact resistance and good adhesion for W and Al application. The IMP technology has an advantage of significant imporving the step coverage but has a limitation on obtaining a good film uniformity due to high pressure operation and coil supttering non-uniformity. ICE technology was used to improve the coil sputtering non-uniformity and film uniformty was improved to approx 4

机译：我们已经开发了适用于300mm衬垫的50 A IMP Ti膜。该工艺开发是在300 mm iLB Endura平台上完成的，该平台结合了IMP Ti的高底部收敛性和可扩展性与CVD TXZ TiN工艺的一致性，从而解决了低接触电阻以及对W和Al应用的良好附着力。 IMP技术具有显着改善阶梯覆盖率的优点，但是由于高压操作和线圈不均匀性而在获得良好的膜均匀性方面受到限制。 ICE技术用于改善线圈溅射不均匀性，并且膜均匀性提高到大约4

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《Conference on Challenges in Process Integration and Device Technology 18-19 September 2000 Santa Clara, USA》|2000年|p.170-174|共5页
会议地点 Santa Clara CA(US)
作者
Xinyu Zhang; Ian Pancham; Anthony C-T Chan; Mani Subamani; John Forster; Jim van Gogh;
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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
关键词
300mm iLB; IMP; Ti; Thickness Uniformity; Target to Substrate Spacing;

机译：300mm iLB； IMP;钛厚度均匀度；目标基板间距;

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1. Evaluating sol-gel ceramic thin films for metal implant applications. I. Processing and structure of zirconia films on Ti-6AI-4V. [J] . Filiaggi MJ, Pilliar RM, Yakubovich R, Journal of biomedical materials research. Part B, Applied biomaterials. . 1996,第4期

机译：用于评价金属植入物应用的溶胶 - 凝胶陶瓷薄膜。 I. Ti-6ai-4V氧化锆膜的加工和结构。
2. Improved resistive switching properties of solution processed ti O _2 thin films [J] . Biju K.P., Liu X., Bourim E.M., Electrochemical and solid-state letters . 2010,第12期

机译：固溶处理的Ti O _2薄膜的改进的电阻开关性能
3. Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO3-buffered silicon substrates by sol-gel processing [J] . Jiwei Zhai, Bo Shen, Xi Yao Journal of Sol-Gel Science and Technology . 2007,第3期

机译：（Pb，La）（Zr，Sn，Ti）O3和Pb（Nb，Zr，Sn，Ti）O3反铁电薄膜通过溶胶-凝胶法沉积在LaNiO3缓冲硅衬底上的相变行为
4. Process Development of 50A IMP Ti Film with <2 [C] . Xinyu Zhang, Ian Pancham, Anthony C-T Chan, Conference on challenges in process integration and device technology . 2000

机译：50A IMP TI薄膜的过程开发<2
5. Evaluating sol-gel ceramic thin films for metal implant applications: A study on the processing and mechanical properties of zirconia films on Ti6Al4V [D] . Filiaggi, Mark Joseph. 1995

机译：评估用于金属植入物的溶胶-凝胶陶瓷薄膜：Ti6Al4V上氧化锆薄膜的加工和力学性能研究
6. Temperature-Dependent Domain Dynamics and Electrical Properties of Nd-doped Bi4Ti2.99Mn0.01O12 Thin Films in Fatigue Process [O] . Wanli Zhang, Yanhu Mao, Shaoan Yan, 2018

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7. Ti Oxide Films Formed by an Anodizing Process for Use in Dental Implants [O] . Ji-eon Leea, Kye-sung Kim, Young-rae Cho, 2015

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8. Formation and Properties of Titanium Disilicide: A Study on the Development ofStress in Ti-Si Thin Films (Vorming en Eigenschappen van Titanium Disilicide. Een Onderzoek naar Spanningsontwikkeling in Dunne Ti-Si Lagen) [R] . Jongste, J. F. 1994

机译：二硅化钛的形成和性质：Ti-si薄膜应力发展的研究（Vorming en Eigenschappen van Tianium Bisilicide.Een Onderzoek naar spanningsontwikkeling in Dunne Ti-si Lagen）

Process Development of 50A IMP Ti Film with <2

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