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首页> 外文会议>Conference on Challenges in Process Integration and Device Technology 18-19 September 2000 Santa Clara, USA >The field effects in the dielectrics coated by ITO films
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The field effects in the dielectrics coated by ITO films

机译：ITO薄膜涂覆的电介质中的场效应

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The work contains results of investigations on the phenomena of the electron emission in thin oxide layers (ITO) in which internal electric field has been generated. Two conducting and transparent films of In_2O_3: Sn were evaporated on both sides of a microscopic cover glass. One film of the thickness 10/20nm was the emitting surface. The other, of thickness 1 umm, was polarized in order to create an internal field. Applying a negative voltage U_pol to field electrode (-2000V/0V) created the internal electric field. The investigations were performed in the vacuum of the order 10~-6Pa. As a result of applying U_pol and illumination, electrons are released and enter electron multiplier. The electrons creatge pulses in the multiplier, which are recorded in the multichannel pulse amplitude analyzer. The pulses in channels of the pulse analyzer, creating so-called voltage pulse amplitude spectrum. The amplitude spectra (for various U_pol) were measured for unilluminated samples and illuminated by a quartz lamp. With increasing U_pol and after illumination the count frequency of pulses grows monotonically. At low U_pol (<= |-500V|) the increase is linear. At higher U_pol this dependenceis exponential. This may be evidence that the electric field initiates electron collisions, which proceed according to impact ionization mechanism. Photoinduced optical second harmonic (SHG) has been also observed in these films. Theoretical calculations have shown that SnO_4 tetrahedral interacting with SiO_4 clusters of the glass substrate play central role in observed nonlinear photoinduced changes.
机译：该工作包含对其中已产生内部电场的薄氧化物层（ITO）中的电子发射现象进行研究的结果。 In_2O_3：Sn的两个导电透明膜在微镜玻璃的两面都蒸发了。厚度为10 / 20nm的一层膜是发射表面。另一个厚度为1 umm的电极被极化以产生内部电场。将负电压U_pol施加到场电极（-2000V / 0V）会产生内部电场。研究是在10〜-6Pa的真空度下进行的。由于施加了U_pol和照明，电子被释放并进入电子倍增器。电子在乘法器中产生脉冲，并记录在多通道脉冲幅度分析仪中。脉冲分析仪通道中的脉冲，产生所谓的电压脉冲幅度谱。测量未照射样品的振幅谱（用于各种U_pol），并用石英灯照射。随着U_pol的增加和照明后，脉冲的计数频率单调增长。在低U_pol（<= | -500V |）时，增加是线性的。在较高的U_pol下，这种依赖性是指数的。这可能是电场引发电子碰撞的证据，电子碰撞根据碰撞电离机理进行。在这些薄膜中也观察到了光诱导的光学二次谐波（SHG）。理论计算表明，SnO_4四面体与玻璃基板的SiO_4团簇相互作用在观察到的非线性光致变化中起着核心作用。

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