Intel Design for Manufacturing and Evolution of Design Rules

机译：英特尔面向制造的设计和设计规则的演变

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Our 45nm technology maintains Moore's law on a technology with a new transistor technology and dry 193nm lithography. Transistor density is on the 2x trend line and variation scaled. Poly rules were changed to allow simple one pitch poly patterning with no impact to transistor density or product performance. Extensive modeling of the rules provided design rules that were stable before first product tape out and robust to allow a fast high volume technology ramp.

机译：我们的45纳米技术在采用新晶体管技术和193纳米干法光刻的技术上保持了摩尔定律。晶体管密度在2倍趋势线上，并按比例缩放。更改了多边形规则以允许简单的一间距多边形构图，而不会影响晶体管密度或产品性能。规则的广泛建模提供了设计规则，该设计规则在首次推出产品之前是稳定的，并且具有强大的功能，可以实现快速的大批量技术升级。

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来源
《Conference on Design for Manufacturability through Design-Process Integration; 20080128-29; San Jose,CA(US)》|2008年|P.iviiviii|共3页
会议地点 San JoseCA(US)
作者
Clair Webb;
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正文语种 eng
中图分类半导体技术;
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Intel Design for Manufacturing and Evolution of Design Rules

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